Skip to main content

Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-xNx/GaAs (x<1%) stepped quantum well

Hill, G.; Hopkinson, M.; Steer, M. J.; Gupta, R.; Lim, A. C.H.; Haywood, S. K.

Authors

G. Hill

M. Hopkinson

M. J. Steer

R. Gupta

A. C.H. Lim

S. K. Haywood S.K.Haywood@hull.ac.uk



Abstract

The authors present room temperature photoluminescence and photocurrent measurements on a three layer GaAsNGaAs Al0.35 Ga0.65 As (N≤1%) stepped quantum well. A blueshift in the ground state transition energy is observed with the application of an electric field. A net blueshift of > 10 meV was obtained at 40 kVcm. These results suggest a type II band lineup in the GaAsNGaAs heterojunction for nitrogen compositions below 1%. © 2006 American Institute of Physics.

Journal Article Type Article
Publication Date Dec 25, 2006
Journal APPLIED PHYSICS LETTERS
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 89
Issue 26
Pages 261110
APA6 Citation Hill, G., Hopkinson, M., Steer, M. J., Gupta, R., Lim, A. C., & Haywood, S. K. (2006). Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-xNx/GaAs (x<1%) stepped quantum well. Applied physics letters, 89(26), 261110. doi:10.1063/1.2424278
DOI https://doi.org/10.1063/1.2424278
Keywords Physics and Astronomy (miscellaneous)
;