Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-xNx/GaAs (x<1%) stepped quantum well
Hill, G.; Hopkinson, M.; Steer, M. J.; Gupta, R.; Lim, A. C.H.; Haywood, S. K.
M. J. Steer
A. C.H. Lim
S. K. Haywood S.K.Haywood@hull.ac.uk
The authors present room temperature photoluminescence and photocurrent measurements on a three layer GaAsNGaAs Al0.35 Ga0.65 As (N≤1%) stepped quantum well. A blueshift in the ground state transition energy is observed with the application of an electric field. A net blueshift of > 10 meV was obtained at 40 kVcm. These results suggest a type II band lineup in the GaAsNGaAs heterojunction for nitrogen compositions below 1%. © 2006 American Institute of Physics.
|Journal Article Type||Article|
|Publication Date||Dec 25, 2006|
|Journal||APPLIED PHYSICS LETTERS|
|Peer Reviewed||Peer Reviewed|
|APA6 Citation||Hill, G., Hopkinson, M., Steer, M. J., Gupta, R., Lim, A. C., & Haywood, S. K. (2006). Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-xNx/GaAs (x<1%) stepped quantum well. Applied physics letters, 89(26), 261110. doi:10.1063/1.2424278|
|Keywords||Physics and Astronomy (miscellaneous)|
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