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Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single- And Double-Molecule Spin Crossover Nanogap Devices (2020)
Journal Article
Gee, A., Jaafar, A. H., Jaafar, A. H., Brachňaková, B., Massey, J., Marrows, C. H., …Kemp, N. T. (2020). Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single- And Double-Molecule Spin Crossover Nanogap Devices. Journal of physical chemistry. C, 124(24), 13393-13399. https://doi.org/10.1021/acs.jpcc.0c03824

Spin crossover (SCO) molecules are promising bistable magnetic switches with applications in molecular spintronics. However, little is known about the switching effects of a single SCO molecule when it is confined between two metal electrodes. Here,... Read More about Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single- And Double-Molecule Spin Crossover Nanogap Devices.

Nanoscale junctions for single molecule electronics fabricated using bilayer nanoimprint lithography combined with feedback controlled electromigration (2020)
Journal Article
Gee, A., Jaafar, A. H., & Kemp, N. T. (2020). Nanoscale junctions for single molecule electronics fabricated using bilayer nanoimprint lithography combined with feedback controlled electromigration. Nanotechnology, 31(15), Article 155203. https://doi.org/10.1088/1361-6528/ab6473

Nanoimprint lithography (NIL) is a fast, simple and high throughput technique that allows fabrication of structures with nanometre precision features at low cost. We present an advanced bilayer nanoimprint lithography approach to fabricate four termi... Read More about Nanoscale junctions for single molecule electronics fabricated using bilayer nanoimprint lithography combined with feedback controlled electromigration.

Large dopant dependence of the current limiting properties of intrinsic conducting polymer surge protection devices (2016)
Journal Article
Jabarullah, N. H., Verrelli, E., Gee, A., Mauldin, C., Navarro, L. A., Golden, J. H., & Kemp, N. T. (in press). Large dopant dependence of the current limiting properties of intrinsic conducting polymer surge protection devices. RSC advances, 6(89), 85710-85717. https://doi.org/10.1039/c6ra18549e

New two terminal surge protection devices based on intrinsic conducting polymers are demonstrated to be strongly affected by the dopant molecule type. Thermogravimetric analysis combined with current–voltage studies show a causal link between the dop... Read More about Large dopant dependence of the current limiting properties of intrinsic conducting polymer surge protection devices.