Skip to main content

Research Repository

Advanced Search

Dispersion and the electron-phonon interaction in a single heterostructure (2016)
Journal Article
Naylor, D. R., Dyson, A., & Ridley, B. K. (2017). Dispersion and the electron-phonon interaction in a single heterostructure. Physica E: Low-dimensional Systems and Nanostructures, 86, (218-224). doi:10.1016/j.physe.2016.06.027. ISSN 1386-9477

We investigate the electron-phonon interaction in a polar-polar single heterostructure through the use of the linear combination of hybrid phonon modes, considering the role of longitudinal optical, transverse optical and interface modes, using a con... Read More about Dispersion and the electron-phonon interaction in a single heterostructure.

Phonon emission and arrival times of electrons from a single-electron source (2016)
Journal Article
Emary, C., Dyson, A., Ryu, S., Sim, H., & Kataoka, M. (2016). Phonon emission and arrival times of electrons from a single-electron source. Physical Review B, 93(3), doi:10.1103/PhysRevB.93.035436

In recent charge-pump experiments, single electrons are injected into quantum Hall edge channels at energies significantly above the Fermi level. We consider here the relaxation of these hot edge-channel electrons through longitudinal-optical-phonon... Read More about Phonon emission and arrival times of electrons from a single-electron source.

Hot phonon effects on high field transport in GaN & AlN (2015)
Journal Article
Dyson, A., Naylor, D. R., & Ridley, B. K. (2015). Hot phonon effects on high field transport in GaN & AlN. IEEE transactions on electron devices, 62(11), 3613-3618. https://doi.org/10.1109/TED.2015.2476383

We have studied the effects of hot phonons on the high-field transport in GaN & AlN. The dynamics of the non-equilibrium electron-LO phonon system is studied via an ensemble Monte-Carlo code. We find that under steady-state conditions the hot-phonons... Read More about Hot phonon effects on high field transport in GaN & AlN.

Hot electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures: The sum rules for electron-phonon interactions and hot-phonon effect (2015)
Journal Article
Zhang, J. -., Dyson, A., & Ridley, B. K. (2015). Hot electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures: The sum rules for electron-phonon interactions and hot-phonon effect. Journal of applied physics, 117(2), doi:10.1063/1.4905717. ISSN 0021-8979

Using the dielectric continuum (DC) and three-dimensional phonon (3DP) models, energy relaxation of the hot electrons in the quasi-two-dimensional channel of lattice-matched InAlN/AlN/GaN heterostructures is studied theoretically, taking into account... Read More about Hot electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures: The sum rules for electron-phonon interactions and hot-phonon effect.

Negative differential resistance associated with hot phonons (2012)
Journal Article
Dyson, A., & Ridley, B. K. (2012). Negative differential resistance associated with hot phonons. Journal of applied physics, 112(6), (063707). doi:10.1063/1.4754012. ISSN 0021-8979

We predict the existence of a hot-phonon negative differential resistance (NDR) in GaN. We show that this is a consequence of a wave-vector dependence of lifetime caused by the effect of coupled plasmon-phonons. Anti-screened long-wavelength modes ha... Read More about Negative differential resistance associated with hot phonons.

Momentum relaxation due to polar optical phonons in AlGaN/GaN heterostructures (2011)
Journal Article
Zhang, J., Zhang, J., Dyson, A., & Ridley, B. K. (2011). Momentum relaxation due to polar optical phonons in AlGaN/GaN heterostructures. Physical review B: Condensed matter and materials physics, 84(15), doi:10.1103/PhysRevB.84.155310

Using the dielectric continuum (DC) model, momentum relaxation rates are calculated for electrons confined in quasi-two-dimensional (quasi-2D) channels of AlGaN/GaN heterostructures. Particular attention is paid to the effects of half-space and inter... Read More about Momentum relaxation due to polar optical phonons in AlGaN/GaN heterostructures.

Novel antenna-integrated photodiodes with strained absorbers designed for use as terahertz sources (2011)
Journal Article
Henning, I. D., Adams, M. J., Vaughan, M., Abraham, T., Sun, Y., Dyson, A., …Firth, R. J. (2011). Novel antenna-integrated photodiodes with strained absorbers designed for use as terahertz sources. IEEE Journal of Selected Topics in Quantum Electronics, 17(1), 202-209. doi:10.1109/jstqe.2010.2049196

We present experimental results on the performance of antenna-integrated photodiodes intended for use as photomixers to provide a tunable broadband source of terahertz (THz) radiation. In a balanced strain-absorber structure, we show that the introdu... Read More about Novel antenna-integrated photodiodes with strained absorbers designed for use as terahertz sources.

Phonon-plasmon coupled-mode lifetime in semiconductors (2008)
Journal Article
Dyson, A., & Ridley, B. K. (2008). Phonon-plasmon coupled-mode lifetime in semiconductors. Journal of applied physics, 103(11), (114507). doi:10.1063/1.2937918. ISSN 0021-8979

Raman scattering measurements of the lifetime of hot phonons in GaN show a decrease with increasing electron concentration. Density-dependent lifetimes have also been deduced from noise measurements of AlGaN/GaN channels. We suggest that the results... Read More about Phonon-plasmon coupled-mode lifetime in semiconductors.