All Outputs (3)

Composting paper and grass clippings with anaerobically treated palm oil mill effluent (2016)
Journal Article
Zahrim, A. Y., Leong, P. S., Ayisah, S. R., Janaun, J., Chong, K. P., Cooke, F. M., & Haywood, S. (2016). Composting paper and grass clippings with anaerobically treated palm oil mill effluent. International Journal Of Recycling of Organic Waste in Agriculture, 5(3), 221-230. https://doi.org/10.1007/s40093-016-0131-9

Purpose The purpose of this study is to investigate the composting performance of anaerobically treated palm oil mill effluent (AnPOME) mixed with paper and grass clippings. Methods Composting was conducted using a laboratory scale system for 40 days... Read More about Composting paper and grass clippings with anaerobically treated palm oil mill effluent.

Room temperature photoluminescence at 4.5 μm from InAsN (2008)
Journal Article
Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T., & Haywood, S. K. (2008). Room temperature photoluminescence at 4.5 μm from InAsN. Journal of applied physics, 103(6), 063520. https://doi.org/10.1063/1.2896638

Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitroge... Read More about Room temperature photoluminescence at 4.5 μm from InAsN.

Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-xNx/GaAs (x<1%) stepped quantum well (2006)
Journal Article
Hill, G., Hopkinson, M., Steer, M. J., Gupta, R., Lim, A. C., & Haywood, S. K. (2006). Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-xNx/GaAs (x

The authors present room temperature photoluminescence and photocurrent measurements on a three layer GaAsNGaAs Al0.35 Ga0.65 As (N≤1%) stepped quantum well. A blueshift in the ground state transition energy is observed with the application of an ele... Read More about Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-xNx/GaAs (x<1%) stepped quantum well.