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L-band-related interband transition in InSb/GaSb self-assembled quantum dots (2008)
Book Chapter
Rybchenko, S. I., Gupta, R., Itskevich, I. E., & Haywood, S. K. (2008). L-band-related interband transition in InSb/GaSb self-assembled quantum dots. In Springer Proceedings in Physics; Narrow Gap Semiconductors 2007 (81-83). Springer Verlag. https://doi.org/10.1007/978-1-4020-8425-6_20

Effect of lattice-mismatch-induced strain on Γ-, X- and L-conduction-band edges in III-V self-assembled quantum dots has been calculated. The misfit strain is shown to strongly affect the band edges, leading to a possibility of Γ-L and Γ-X crossover.... Read More about L-band-related interband transition in InSb/GaSb self-assembled quantum dots.

Room temperature photoluminescence at 4.5 μm from InAsN (2008)
Journal Article
Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T., & Haywood, S. K. (2008). Room temperature photoluminescence at 4.5 μm from InAsN. Journal of applied physics, 103(6), 063520. https://doi.org/10.1063/1.2896638

Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitroge... Read More about Room temperature photoluminescence at 4.5 μm from InAsN.