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Room temperature photoluminescence at 4.5 μm from InAsN (2008)
Journal Article
Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T., & Haywood, S. K. (2008). Room temperature photoluminescence at 4.5 μm from InAsN. Journal of applied physics, 103(6), 063520. https://doi.org/10.1063/1.2896638

Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitroge... Read More about Room temperature photoluminescence at 4.5 μm from InAsN.