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Monte Carlo simulations of two-dimensional electron gasses in gallium nitride high electron mobility transistors via general-purpose computing on graphics processing units (2020)
Thesis
Smith, L. (2020). Monte Carlo simulations of two-dimensional electron gasses in gallium nitride high electron mobility transistors via general-purpose computing on graphics processing units. (Thesis). University of Hull. Retrieved from https://hull-repository.worktribe.com/output/4223241

The work in this thesis covers two main topics: successfully porting an Ensemble Monte Carlo (EMC) focused on bulk III-V semiconductors on to the graphics processing unit (GPU) and investigating carrier transport in a two-dimensional electron gas (2D... Read More about Monte Carlo simulations of two-dimensional electron gasses in gallium nitride high electron mobility transistors via general-purpose computing on graphics processing units.

Monte-Carlo simulations of Gunn diodes and hot-phonon effects in bulk semiconductors (2016)
Thesis
Appleyard, N. (2016). Monte-Carlo simulations of Gunn diodes and hot-phonon effects in bulk semiconductors. (Thesis). University of Hull. Retrieved from https://hull-repository.worktribe.com/output/4219588

This thesis uses Monte Carlo simulations to investigate electron transport in GaAs, its ternary In0.₅₃Ga₀.₄₇As and GaN. Ensemble Monte Carlo methods are used to determine the effects of a non-equilibrium phonon distribution on the transport propertie... Read More about Monte-Carlo simulations of Gunn diodes and hot-phonon effects in bulk semiconductors.

Development of Monte-Carlo simulations for III-V semiconductors employing an analytic band-structure (2012)
Thesis
Naylor, D. R. (. R. (2012). Development of Monte-Carlo simulations for III-V semiconductors employing an analytic band-structure. (Thesis). University of Hull. Retrieved from https://hull-repository.worktribe.com/output/4213458

The thesis is primarily concerned with the III-V-N semiconductors Gallium Nitride (GaN) and the dilute nitride Gallium Nitrogen Arsenide (GaNAs) and the effect that the band structure has on electron transport in these materials. Ensemble Monte-Carlo... Read More about Development of Monte-Carlo simulations for III-V semiconductors employing an analytic band-structure.