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All Outputs (21)

Tunable photon statistics exploiting the Fano effect in a waveguide (2019)
Journal Article
Foster, A. P., Hallett, D., Iorsh, I. V., Sheldon, S. J., Godsland, M. R., Royall, B., …Wilson, L. R. (2019). Tunable photon statistics exploiting the Fano effect in a waveguide. Physical review letters, 122(17), Article 173603. https://doi.org/10.1103/PhysRevLett.122.173603

A strong optical nonlinearity arises when coherent light is scattered by a semiconductor quantum dot coupled to a nanophotonic waveguide. We exploit the Fano effect in such a waveguide to control the phase of the quantum interference underpinning the... Read More about Tunable photon statistics exploiting the Fano effect in a waveguide.

High Purcell factor generation of indistinguishable on-chip single photons (2018)
Journal Article
Liu, F., Brash, A. J., O’Hara, J., Martins, L. M., Phillips, C. L., Coles, R. J., …Fox, A. M. (2018). High Purcell factor generation of indistinguishable on-chip single photons. Nature nanotechnology, 13(9), 835-840. https://doi.org/10.1038/s41565-018-0188-x

On-chip single-photon sources are key components for integrated photonic quantum technologies. Semiconductor quantum dots can exhibit near-ideal single-photon emission, but this can be significantly degraded in on-chip geometries owing to nearby etch... Read More about High Purcell factor generation of indistinguishable on-chip single photons.

Electrical control of nonlinear quantum optics in a nano-photonic waveguide (2018)
Journal Article
Hallett, D., Foster, A. P., Hurst, D. L., Royall, B., Kok, P., Clarke, E., …Wilson, L. R. (2018). Electrical control of nonlinear quantum optics in a nano-photonic waveguide. Optica, 5(5), 644-650. https://doi.org/10.1364/optica.5.000644

© 2018 Optical Society of America. Quantum photonics is a rapidly developing platform for future quantum network applications. Waveguide-based architectures, in which embedded quantum emitters act as both nonlinear elements to mediate photon–photon i... Read More about Electrical control of nonlinear quantum optics in a nano-photonic waveguide.

Single-photon electroluminescence for on-chip quantum networks (2016)
Journal Article
Bentham, C., Hallett, D., Prtljaga, N., Royall, B., Vaitiekus, D., Coles, R. J., …Wilson, L. R. (2016). Single-photon electroluminescence for on-chip quantum networks. Applied physics letters, 109(16), 161101. https://doi.org/10.1063/1.4965295

An electrically driven single-photon source has been monolithically integrated with nano-photonic circuitry. Electroluminescent emission from a single InAs/GaAs quantum dot (QD) is channelled through a suspended nanobeam waveguide. The emission line... Read More about Single-photon electroluminescence for on-chip quantum networks.

On-chip electrically controlled routing of photons from a single quantum dot (2015)
Journal Article
Bentham, C., Itskevich, I. E., Coles, R. J., Royall, B., Clarke, E., O'Hara, J., …Wilson, L. R. (2015). On-chip electrically controlled routing of photons from a single quantum dot. Applied physics letters, 106(22), Article 221101. https://doi.org/10.1063/1.4922041

Electrical control of on-chip routing of photons emitted by a single InAs/GaAs self-assembled quantum dot (SAQD) is demonstrated in a photonic crystal cavity-waveguide system. The SAQD is located inside an H1 cavity, which is coupled to two photonic... Read More about On-chip electrically controlled routing of photons from a single quantum dot.

Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors (2012)
Journal Article
Hong, B. H., Rybchenko, S. I., Itskevich, I. E., Haywood, S. K., Tan, C. H., Vines, P., & Hugues, M. (2012). Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors. Journal of applied physics, 111(3), 033713. https://doi.org/10.1063/1.3684603

Intraband absorption in quantum-dot-in-a-well (DWELL) mid-infrared photodetectors is investigated using photocurrent spectroscopy and computationally cost-effective modeling linked to experimental data. The DWELL systems are challenging for modeling... Read More about Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors.

Modelling of semiconductor nanostructures : electronic properties and simulated optical spectra (2011)
Thesis
Hong, B. H. (2011). Modelling of semiconductor nanostructures : electronic properties and simulated optical spectra. (Thesis). University of Hull. Retrieved from https://hull-repository.worktribe.com/output/4211756

III-V semiconductor nanostructures are widely used in optoelectronic devices (e.g. lasers and detectors) in the visible (0.4-0.8 μm), near-infrared (0.8-3 μm), mid-infrared (3-5 μm) and far-infrared (> 8 μm) wavelength ranges, with great potential fo... Read More about Modelling of semiconductor nanostructures : electronic properties and simulated optical spectra.

Study of quantum dot and quantum well photodetectors (2010)
Thesis
Jabarullah, N. H. (2010). Study of quantum dot and quantum well photodetectors. (Thesis). University of Hull. Retrieved from https://hull-repository.worktribe.com/output/4209552

A study of quantum dots-in-well infrared photodetectors (QDIPs) yields results useful for the creation of a two-colour QDIP. Quantum dot infrared photodetectors (QDIPs) have been shown to be a key technology in mid and long wavelength infrared detect... Read More about Study of quantum dot and quantum well photodetectors.

Electro-optical method of distinguishing recyclable plastics (2010)
Thesis
Ee Yee, L. C. (2010). Electro-optical method of distinguishing recyclable plastics. (Thesis). University of Hull. Retrieved from https://hull-repository.worktribe.com/output/4209592

The UK produces 3 million tonnes of plastic waste each year, of which 85% is landfilled, 8% is incinerated and only 7% recycled. Recycling just one plastic bottle saves enough energy to power a 60W light bulb for six hours. Our local East Riding of Y... Read More about Electro-optical method of distinguishing recyclable plastics.

Modeling of intraband absorption for quantum dot-in-well structures with low computational cost (2010)
Journal Article
Hong, B. H., Rybchenko, S. I., Itskevich, I. E., Haywood, S. K., Tan, C. H., Vines, P., & Hugues, M. (2010). Modeling of intraband absorption for quantum dot-in-well structures with low computational cost. Journal of Physics: Conference Series, 242(1), Article 012013. https://doi.org/10.1088/1742-6596/242/1/012013

Much effort has been committed to development of quantum-dot-based infrared photodetectors owing to their potential for normal-incidence absorption and low dark current.Quantum-dot-in-well structures offer additional advantages, such as better wavele... Read More about Modeling of intraband absorption for quantum dot-in-well structures with low computational cost.

Strained arrays of colloidal nanoparticles: Conductance and magnetoresistance enhancement (2009)
Journal Article
Rybchenko, S. I., Dyab, A. K. F., Haywood, S. K., Itskevich, I. E., & Paunov, V. N. (2009). Strained arrays of colloidal nanoparticles: Conductance and magnetoresistance enhancement. Nanotechnology, 20(42), Article ARTN 425607. https://doi.org/10.1088/0957-4484/20/42/425607

Colloidal nanoparticles are very popular as building blocks of functional arrays for electronic and optical applications. However, there is a problem in achieving electrical conductivity in such nanoarrays due to their molecular shells. These shells,... Read More about Strained arrays of colloidal nanoparticles: Conductance and magnetoresistance enhancement.

Electronic structure and optical properties of sb-based self-assembled quantum dots for the mid-infrared range (2009)
Thesis
Yeap, G. H. (2009). Electronic structure and optical properties of sb-based self-assembled quantum dots for the mid-infrared range. (Thesis). University of Hull. Retrieved from https://hull-repository.worktribe.com/output/4209306

Quantum dots (QDs) are zero-dimensional nanostructures that confined carriers in three dimensions comparable to their de Broglie wavelengths. Therefore, carriers exhibit δ-shaped energy levels and densities of states. Due to their band structure, QD... Read More about Electronic structure and optical properties of sb-based self-assembled quantum dots for the mid-infrared range.

Applicability of the kp method to modeling of InAs/GaSb short-period superlattices (2009)
Journal Article
Hong, B. H., Rybchenko, S. I., Itskevich, I. E., Haywood, S. K., Intartaglia, R., Tasco, V., …De Giorgi, M. (2009). Applicability of the kp method to modeling of InAs/GaSb short-period superlattices. Physical review B: Condensed matter and materials physics, 79(16), 165323-1-165323-4. https://doi.org/10.1103/PhysRevB.79.165323

We investigate the long-standing controversy surrounding modeling of the electronic spectra of InAs/GaSb short-period superlattices (SPSLs). Most commonly, such modeling for semiconductor heterostructures is based on the kp method. However, this meth... Read More about Applicability of the kp method to modeling of InAs/GaSb short-period superlattices.

Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties (2009)
Journal Article
Yeap, G. H., Rybchenko, S. I., Itskevich, I. E., & Haywood, S. K. (2009). Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties. Physical review B: Condensed matter and materials physics, 79(7), 075305-1-075305-6. https://doi.org/10.1103/physrevb.79.075305

InSb-based self-assembled quantum dots are very promising for the midinfrared (3-5μm) optical range. We have analyzed the effect of geometry and composition on the electronic structure and optical spectra of InAsx Sb1-x /InAs dots. The calculated tra... Read More about Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties.

L-band-related interband transition in InSb/GaSb self-assembled quantum dots (2008)
Book Chapter
Rybchenko, S. I., Gupta, R., Itskevich, I. E., & Haywood, S. K. (2008). L-band-related interband transition in InSb/GaSb self-assembled quantum dots. Springer Proceedings in Physics; Narrow Gap Semiconductors 2007 (81-83). Springer Verlag. https://doi.org/10.1007/978-1-4020-8425-6_20

Effect of lattice-mismatch-induced strain on Γ-, X- and L-conduction-band edges in III-V self-assembled quantum dots has been calculated. The misfit strain is shown to strongly affect the band edges, leading to a possibility of Γ-L and Γ-X crossover.... Read More about L-band-related interband transition in InSb/GaSb self-assembled quantum dots.

Conduction-band crossover induced by misfit strain in InSb/GaSb self-assembled quantum dots (2007)
Journal Article
Rybchenko, S. I., Gupta, R., Lai, K. T., Itskevich, I. E., Haywood, S. K., Tasco, V., …Tournié, E. (2007). Conduction-band crossover induced by misfit strain in InSb/GaSb self-assembled quantum dots. Physical review B: Condensed matter and materials physics, 76(19), 0 - 0. https://doi.org/10.1103/physrevb.76.193309

We address the occurrence of conduction-band crossover in III-V self-assembled quantum dots solely due to misfit strain. Band structure analysis in terms of standard deformation-potential theory shows that Γ-X crossover can occur in the dot, while bo... Read More about Conduction-band crossover induced by misfit strain in InSb/GaSb self-assembled quantum dots.

Importance of aspect ratio over shape in determining the quantization potential of self-assembled zinc-blende III-V quantum dots (2007)
Journal Article
Rybchenko, S. I., Yeap, G., Gupta, R., Itskevich, I. E., & Haywood, S. K. (2007). Importance of aspect ratio over shape in determining the quantization potential of self-assembled zinc-blende III-V quantum dots. Journal of applied physics, 102(1), 013706. https://doi.org/10.1063/1.2752127

We have studied the effect of shape on the strain-modified electron/hole confinement potential in zinc-blende quantum dots (QDs), using standard deformation potential theory and an anisotropic continuum-elasticity approximation. Calculations were per... Read More about Importance of aspect ratio over shape in determining the quantization potential of self-assembled zinc-blende III-V quantum dots.

Tuning of electronic coupling between self-assembled quantum dots (2005)
Journal Article
Rybchenko, S., Itskevich, I., Skolnick, M. S., Cahill, J., Tartakovskii, A. I., Hill, G., & Hopkinson, M. (2005). Tuning of electronic coupling between self-assembled quantum dots. Applied physics letters, 87(3), 033104. https://doi.org/10.1063/1.1995953

Semiconductor self-assembled quantum dots (SAQDs) normally have zero-dimensional properties, but become coupled and acquire higher-dimensional character if the distance between the dots is small. Using photoluminescence spectroscopy under high hydros... Read More about Tuning of electronic coupling between self-assembled quantum dots.

High pressure as a tool to tune electronic coupling in self-assembled quantum dot nanostructures (2004)
Journal Article
Itskevich, I. E., Rybchenko, S. I., Andreev, A. D., Cahill, J., Tartakovskii, A. I., Skolnick, M. S., …Hopkinson, M. (2004). High pressure as a tool to tune electronic coupling in self-assembled quantum dot nanostructures. physica status solidi (b), 241(14), 3257-3262. https://doi.org/10.1002/pssb.200405235

High pressure provides an efficient way of controlling the electronic properties of semiconductor nanostructures. We use pressure to tune electronic coupling in stacks of self-assembled quantum dots (SAQDs). The coupling occurs as soon as the distanc... Read More about High pressure as a tool to tune electronic coupling in self-assembled quantum dot nanostructures.

Stark shift in electroluminescence of individual InAs quantum dots (2000)
Journal Article
Itskevich, I., Rybchenko, S., Tartakovskii, I., Stoddart, S., Levin, A., Main, P., …Parnell, S. (in press). Stark shift in electroluminescence of individual InAs quantum dots. Applied physics letters, 76(26), 3932-3934. https://doi.org/10.1063/1.126825

We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assembled quantum dots is embedded, with an active area of submicron size. In the electroluminescence spectra of these devices, we observed isolated narrow... Read More about Stark shift in electroluminescence of individual InAs quantum dots.