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Monte Carlo simulations of two-dimensional electron gasses in gallium nitride high electron mobility transistors via general-purpose computing on graphics processing units (2020)
Thesis
Smith, L. (2020). Monte Carlo simulations of two-dimensional electron gasses in gallium nitride high electron mobility transistors via general-purpose computing on graphics processing units. (Thesis). University of Hull. Retrieved from https://hull-repository.worktribe.com/output/4223241

The work in this thesis covers two main topics: successfully porting an Ensemble Monte Carlo (EMC) focused on bulk III-V semiconductors on to the graphics processing unit (GPU) and investigating carrier transport in a two-dimensional electron gas (2D... Read More about Monte Carlo simulations of two-dimensional electron gasses in gallium nitride high electron mobility transistors via general-purpose computing on graphics processing units.

Monte-Carlo simulations of Gunn diodes and hot-phonon effects in bulk semiconductors (2016)
Thesis
Appleyard, N. (2016). Monte-Carlo simulations of Gunn diodes and hot-phonon effects in bulk semiconductors. (Thesis). University of Hull. Retrieved from https://hull-repository.worktribe.com/output/4219588

This thesis uses Monte Carlo simulations to investigate electron transport in GaAs, its ternary In0.₅₃Ga₀.₄₇As and GaN. Ensemble Monte Carlo methods are used to determine the effects of a non-equilibrium phonon distribution on the transport propertie... Read More about Monte-Carlo simulations of Gunn diodes and hot-phonon effects in bulk semiconductors.

Dispersion and the electron-phonon interaction in a single heterostructure (2016)
Journal Article
Naylor, D. R., Dyson, A., & Ridley, B. K. (2017). Dispersion and the electron-phonon interaction in a single heterostructure. Physica E: Low-dimensional Systems and Nanostructures, 86, 218-224. https://doi.org/10.1016/j.physe.2016.06.027

We investigate the electron-phonon interaction in a polar-polar single heterostructure through the use of the linear combination of hybrid phonon modes, considering the role of longitudinal optical, transverse optical and interface modes, using a con... Read More about Dispersion and the electron-phonon interaction in a single heterostructure.

Phonon emission and arrival times of electrons from a single-electron source (2016)
Journal Article
Emary, C., Dyson, A., Ryu, S., Sim, H., & Kataoka, M. (2016). Phonon emission and arrival times of electrons from a single-electron source. Physical Review B, 93(3), Article ARTN 035436. https://doi.org/10.1103/PhysRevB.93.035436

In recent charge-pump experiments, single electrons are injected into quantum Hall edge channels at energies significantly above the Fermi level. We consider here the relaxation of these hot edge-channel electrons through longitudinal-optical-phonon... Read More about Phonon emission and arrival times of electrons from a single-electron source.

Hot phonon effects on high field transport in GaN & AlN (2015)
Journal Article
Dyson, A., Naylor, D. R., & Ridley, B. K. (2015). Hot phonon effects on high field transport in GaN & AlN. IEEE transactions on electron devices, 62(11), 3613-3618. https://doi.org/10.1109/TED.2015.2476383

We have studied the effects of hot phonons on the high-field transport in GaN & AlN. The dynamics of the non-equilibrium electron-LO phonon system is studied via an ensemble Monte-Carlo code. We find that under steady-state conditions the hot-phonons... Read More about Hot phonon effects on high field transport in GaN & AlN.

Hot electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures: The sum rules for electron-phonon interactions and hot-phonon effect (2015)
Journal Article
Zhang, J. -., Dyson, A., & Ridley, B. K. (2015). Hot electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures: The sum rules for electron-phonon interactions and hot-phonon effect. Journal of applied physics, 117(2), Article ARTN 025701. https://doi.org/10.1063/1.4905717

Using the dielectric continuum (DC) and three-dimensional phonon (3DP) models, energy relaxation of the hot electrons in the quasi-two-dimensional channel of lattice-matched InAlN/AlN/GaN heterostructures is studied theoretically, taking into account... Read More about Hot electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures: The sum rules for electron-phonon interactions and hot-phonon effect.

Development of Monte-Carlo simulations for III-V semiconductors employing an analytic band-structure (2012)
Thesis
Naylor, D. R. (. R. (2012). Development of Monte-Carlo simulations for III-V semiconductors employing an analytic band-structure. (Thesis). University of Hull. Retrieved from https://hull-repository.worktribe.com/output/4213458

The thesis is primarily concerned with the III-V-N semiconductors Gallium Nitride (GaN) and the dilute nitride Gallium Nitrogen Arsenide (GaNAs) and the effect that the band structure has on electron transport in these materials. Ensemble Monte-Carlo... Read More about Development of Monte-Carlo simulations for III-V semiconductors employing an analytic band-structure.

Momentum relaxation due to polar optical phonons in AlGaN/GaN heterostructures (2011)
Journal Article
Zhang, J., Zhang, J., Dyson, A., & Ridley, B. K. (2011). Momentum relaxation due to polar optical phonons in AlGaN/GaN heterostructures. Physical review B: Condensed matter and materials physics, 84(15), Article ARTN 155310. https://doi.org/10.1103/PhysRevB.84.155310

Using the dielectric continuum (DC) model, momentum relaxation rates are calculated for electrons confined in quasi-two-dimensional (quasi-2D) channels of AlGaN/GaN heterostructures. Particular attention is paid to the effects of half-space and inter... Read More about Momentum relaxation due to polar optical phonons in AlGaN/GaN heterostructures.