Optical and ion beam studies of excimer laser irradiated hexagonal silicon carbide
(2000)
Thesis
Walton, C. D. (2000). Optical and ion beam studies of excimer laser irradiated hexagonal silicon carbide. (Thesis). University of Hull. Retrieved from https://hull-repository.worktribe.com/output/4222761
The realisation of doped regions, specifically Nitrogen, in Silicon Carbide (SiC) for transistor and p-n junction applications is a serious problem. Difficulty arises because of the low value of the diffusion coefficient and consequently the excessiv... Read More about Optical and ion beam studies of excimer laser irradiated hexagonal silicon carbide.