Investigation of the gate oxide leakage current of low temperature formed hafnium oxide films
(2013)
Journal Article
Verrelli, E., & Tsoukalas, D. (2013). Investigation of the gate oxide leakage current of low temperature formed hafnium oxide films. Journal of applied physics, 113(11), Article 114103. https://doi.org/10.1063/1.4795278
In this work, low temperature physically deposited hafnium oxide films are investigated in terms of their electrical properties through measurements and analysis of leakage currents in order to understand the defects behavior in this dielectric mater... Read More about Investigation of the gate oxide leakage current of low temperature formed hafnium oxide films.