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Microwave oven fabricated hybrid memristor devices for non-volatile memory storage

O’Neill, M; Verrelli, E.; Gray, R. J.; O'Neill, M.; Kelly, S. M.; Kemp, N. T.


M O’Neill

R. J. Gray

M. O'Neill

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Dr Neil Kemp
Director of Postgraduate Researchers (Physics and Mathematics), Senior Lecturer in Physics


© 2014 IOP Publishing Ltd. Novel hybrid non-volatile memories made using an ultra-fast microwave heating method are reported for the first time. The devices, consisting of aligned ZnO nanorods embedded in poly (methyl methacrylate), require no forming step and exhibit reliable and reproducible bipolar resistive switching at low voltages and with low power usage. We attribute these properties to a combination of the high aspect ratio of the nanorods and the polymeric hybrid structure of the device. The extremely easy, fast and low-cost solution based method of fabrication makes possible the simple and quick production of cheap memory cells.

Publication Date 2014-11
Journal Materials research express
Electronic ISSN 2053-1591
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 1
Issue 4
Article Number ARTN 046305
APA6 Citation Verrelli, E., Gray, R. J., O'Neill, M., Kelly, S. M., & Kemp, N. T. (2014). Microwave oven fabricated hybrid memristor devices for non-volatile memory storage. Materials Research Express, 1(4),
Keywords Electronics and devices, Memristor, Hybrid, ZnO nanorod, Resistive memory, Non-volatile, PMMA, Bipolar switching
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Additional Information This is an author-created, un-copyedited version of an article published in Materials research express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1088/2053-1591/1/4/046305


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