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Hot phonon effects on high field transport in GaN & AlN

Dyson, Angela; Naylor, Daniel R.; Ridley, Brian K.

Authors

Angela Dyson

Daniel R. Naylor

Brian K. Ridley



Abstract

We have studied the effects of hot phonons on the high-field transport in GaN & AlN. The dynamics of the non-equilibrium electron-LO phonon system is studied via an ensemble Monte-Carlo code. We find that under steady-state conditions the hot-phonons cause the randomization of the electron momentum and increase their mean energy leading to diffusive heating. Average electron energies of three and two times those in the equilibrium phonon cases are found for GaN and AlN at applied fields of 100 kV/cm and 350 kV/cm respectively. The electron velocity is reduced compared to the case with equilibrium phonons at the lattice temperature. In the transient regime peak velocities reached at overshoot are reduced when non-equilibrium phonons are taken into account.

Citation

Dyson, A., Naylor, D. R., & Ridley, B. K. (2015). Hot phonon effects on high field transport in GaN & AlN. IEEE transactions on electron devices, 62(11), 3613-3618. https://doi.org/10.1109/TED.2015.2476383

Journal Article Type Article
Acceptance Date Aug 24, 2015
Online Publication Date Sep 17, 2015
Publication Date 2015-11
Deposit Date Nov 30, 2015
Publicly Available Date Nov 23, 2017
Journal IEEE transactions on electron devices
Print ISSN 0018-9383
Electronic ISSN 1557-9646
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 62
Issue 11
Pages 3613-3618
DOI https://doi.org/10.1109/TED.2015.2476383
Keywords Hot carriers; Monte Carlo methods
Public URL https://hull-repository.worktribe.com/output/381935
Publisher URL http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7271038
Copyright Statement © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Additional Information This is an author accepted manuscript of an article published in IEEE transactions on electron devices, 2015, v.62 issue 11.

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Copyright Statement
© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.





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