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Hot phonon effects on high field transport in GaN & AlN

Dyson, Angela; Naylor, Daniel R.; Ridley, Brian K.

Authors

Angela Dyson

Daniel R. Naylor

Brian K. Ridley

Abstract

We have studied the effects of hot phonons on the high-field transport in GaN & AlN. The dynamics of the non-equilibrium electron-LO phonon system is studied via an ensemble Monte-Carlo code. We find that under steady-state conditions the hot-phonons cause the randomization of the electron momentum and increase their mean energy leading to diffusive heating. Average electron energies of three and two times those in the equilibrium phonon cases are found for GaN and AlN at applied fields of 100 kV/cm and 350 kV/cm respectively. The electron velocity is reduced compared to the case with equilibrium phonons at the lattice temperature. In the transient regime peak velocities reached at overshoot are reduced when non-equilibrium phonons are taken into account.

Journal Article Type Article
Publication Date 2015-11
Journal IEEE transactions on electron devices
Print ISSN 0018-9383
Electronic ISSN 1557-9646
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 62
Issue 11
Pages 3613-3618
Institution Citation Dyson, A., Naylor, D. R., & Ridley, B. K. (2015). Hot phonon effects on high field transport in GaN & AlN. IEEE transactions on electron devices, 62(11), 3613-3618. https://doi.org/10.1109/TED.2015.2476383
DOI https://doi.org/10.1109/TED.2015.2476383
Keywords Hot carriers; Monte Carlo methods
Publisher URL http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7271038
Copyright Statement © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Additional Information This is an author accepted manuscript of an article published in IEEE transactions on electron devices, 2015, v.62 issue 11.

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Copyright Statement
© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.



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