Hot phonon effects on high field transport in GaN & AlN

Dyson, Angela; Naylor, Daniel R.; Ridley, Brian K.

Abstract

We have studied the effects of hot phonons on the high-field transport in GaN & AlN. The dynamics of the non-equilibrium electron-LO phonon system is studied via an ensemble Monte-Carlo code. We find that under steady-state conditions the hot-phonons cause the randomization of the electron momentum and increase their mean energy leading to diffusive heating. Average electron energies of three and two times those in the equilibrium phonon cases are found for GaN and AlN at applied fields of 100 kV/cm and 350 kV/cm respectively. The electron velocity is reduced compared to the case with equilibrium phonons at the lattice temperature. In the transient regime peak velocities reached at overshoot are reduced when non-equilibrium phonons are taken into account.

Citation

Dyson, A., Naylor, D. R., & Ridley, B. K. (2015). Hot phonon effects on high field transport in GaN & AlN. IEEE transactions on electron devices, 62(11), 3613-3618. https://doi.org/10.1109/TED.2015.2476383

• Journal Article Type: Article
• Acceptance Date: Aug 24, 2015
• Online Publication Date: Sep 17, 2015
• Publication Date: 2015-11
• Deposit Date: Nov 30, 2015
• Publicly Available Date: Nov 23, 2017
• Journal: IEEE transactions on electron devices
• Print ISSN: 0018-9383
• Publisher: Institute of Electrical and Electronics Engineers
• Peer Reviewed: Peer Reviewed
• Volume: 62
• Issue: 11
• Pages: 3613-3618
• DOI: https://doi.org/10.1109/TED.2015.2476383
• Keywords: Hot carriers; Monte Carlo methods
• Public URL: https://hull-repository.worktribe.com/output/381935
• Publisher URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7271038
• Additional Information: This is an author accepted manuscript of an article published in IEEE transactions on electron devices, 2015, v.62 issue 11.
• Contract Date: Nov 23, 2017