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Cluster beam synthesis of metal and metal-oxide nanoparticles for emerging memories

Verrelli, E.; Tsoukalas, D.


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Dr Emanuele Verrelli
Lecturer in Physics, Director of Postgraduate Researchers, Seminar organiser, First aider

D. Tsoukalas


© 2014 Elsevier Ltd. All rights reserved. In this work we present results concerning the cluster beam synthesis of metal and metal-oxide nanoparticles together with their applications in emerging memories like nanoparticle Flash memories and resistive switching memories. Regarding the former, very large memory windows of 7-8 V are presented at voltages below 10 V using Ni, Pt or Au nanoparticles. Regarding the latter, metal-insulator-metal devices based upon titanium oxide nanoparticle films show switching voltages well below 1 V with high-to-low resistance ratios as high as 1000. An in depth analysis of the physical and electrical properties of the titanium oxide nanoparticle films allows to shine light onto the physics behind the switching mechanism.


Verrelli, E., & Tsoukalas, D. (2014). Cluster beam synthesis of metal and metal-oxide nanoparticles for emerging memories. Solid-state electronics, 101, 95-105.

Journal Article Type Article
Online Publication Date Jun 28, 2014
Publication Date 2014-11
Deposit Date Jun 29, 2018
Journal Solid-State Electronics
Print ISSN 0038-1101
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 101
Pages 95-105
Keywords Emerging; Nanoparticles; Memories; Cluster beam; Sputtering
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