Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties
(2024)
Journal Article
Jaafar, A. H., Al Habsi, S. K. S., Braben, T., Venables, C., Francesconi, M. G., Stasiuk, G. J., & Kemp, N. T. (2024). Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties. ACS Applied Materials & Interfaces, 16(33), 43816–43826. https://doi.org/10.1021/acsami.4c07820
We report on hybrid memristor devices consisting of germanium dioxide nanoparticles (GeO2 NP) embedded within a poly(methyl methacrylate) (PMMA) thin film. Besides exhibiting forming-free resistive switching and an uncommon “ON” state in pristine con... Read More about Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties.