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Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties

Jaafar, Ayoub H.; Al Habsi, Salim Khalfan Suroor; Braben, Thomas; Venables, Craig; Francesconi, Maria Grazia; Stasiuk, Graeme J.; Kemp, Neil T.

Authors

Ayoub H. Jaafar

Salim Khalfan Suroor Al Habsi

Thomas Braben

Craig Venables

Graeme J. Stasiuk

Neil T. Kemp



Abstract

We report on hybrid memristor devices consisting of germanium dioxide nanoparticles (GeO2 NP) embedded within a poly(methyl methacrylate) (PMMA) thin film. Besides exhibiting forming-free resistive switching and an uncommon “ON” state in pristine conditions, the hybrid (nanocomposite) devices demonstrate a unique form of mixed-mode switching. The observed stopping voltage-dependent switching enables state-of-the-art bifunctional synaptic behavior with short-term (volatile/temporal) and long-term (nonvolatile/nontemporal) modes that are switchable depending on the stopping voltage applied. The short-term memory mode device is demonstrated to further emulate important synaptic functions such as short-term potentiation (STP), short-term depression (STD), paired-pulse facilitation (PPF), post-tetanic potentiation (PTP), spike-voltage-dependent plasticity (SVDP), spike-duration-dependent plasticity (SDDP), and, more importantly, the “learning-forgetting-rehearsal” behavior. The long-term memory mode gives additional long-term potentiation (LTP) and long-term depression (LTD) characteristics for long-term plasticity applications. The work shows a unique coexistence of the two resistive switching modes, providing greater flexibility in device design for future adaptive and reconfigurable neuromorphic computing systems at the hardware level.

Citation

Jaafar, A. H., Al Habsi, S. K. S., Braben, T., Venables, C., Francesconi, M. G., Stasiuk, G. J., & Kemp, N. T. (2024). Unique Coexistence of Two Resistive Switching Modes in a Memristor Device Enables Multifunctional Neuromorphic Computing Properties. ACS Applied Materials & Interfaces, 16(33), 43816–43826. https://doi.org/10.1021/acsami.4c07820

Journal Article Type Article
Acceptance Date Aug 5, 2024
Online Publication Date Aug 12, 2024
Publication Date Aug 21, 2024
Deposit Date Aug 5, 2024
Publicly Available Date Aug 13, 2024
Journal ACS Applied Materials and Interfaces
Print ISSN 1944-8244
Publisher American Chemical Society
Peer Reviewed Peer Reviewed
Volume 16
Issue 33
Pages 43816–43826
DOI https://doi.org/10.1021/acsami.4c07820
Keywords Memristor; Volatile; Nonvolatile; Synapse; GeO2 nanoparticles; Polymer
Public URL https://hull-repository.worktribe.com/output/4784339

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