Skip to main content

Research Repository

Advanced Search

All Outputs (43)

Detection in near-field domain of biomolecules adsorbed on a single metallic nanoparticle (2008)
Journal Article
Barbillon, G., Bijeon, J. L., Bouillard, J. S., Plain, J., Lamy De La Chapelle, M., Adam, P. M., & Royer, P. (2008). Detection in near-field domain of biomolecules adsorbed on a single metallic nanoparticle. Journal of Microscopy, 229(2), 270-274. https://doi.org/10.1111/j.1365-2818.2008.01898.x

In this paper, we study the performances of nanosensors based on Localized Surface Plasmon Resonance in the context of biological sensing. We demonstrate the sensitivity and the selectivity of our designed nanosensors by studying the influence of the... Read More about Detection in near-field domain of biomolecules adsorbed on a single metallic nanoparticle.

Soft photo structuring of porous silicon in water (2007)
Journal Article
Juan, M., Bouillard, J. S., Plain, J., Bachelot, R., Adam, P. M., Lerondel, G., & Royer, P. (2007). Soft photo structuring of porous silicon in water. physica status solidi (a), 204(5), 1276-1280. https://doi.org/10.1002/pssa.200674307

We report on local photo‐induced patterning of porous silicon in water. Scanning probe microscopy images of the sample surface after illumination show that the emission properties as well as the topography are modified according to the interferometri... Read More about Soft photo structuring of porous silicon in water.

Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs (2006)
Journal Article
Pougeoise, E., Gilet, P., Grosse, P., Poncet, S., Chelnokov, A., Gérard, J. M., …Royer, P. (2006). Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs. Proceedings of SPIE, 6185, https://doi.org/10.1117/12.662118

In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-... Read More about Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs.