Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs

Abstract

In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-phase epitaxy (MOVPE). These lasers exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm at room temperature is reached for a 4 μm oxide diameter VCSEL. The particular design of the active layer based on a large detuning between the gain maximum and the cavity resonance gives our devices a very specific thermal and modal behaviour. Therefore, we study the spectral and spatial distributions of the transverse modes by near field scanning optical microscopy using a micropolymer tip at the end of an optical fibre.

Citation

Pougeoise, E., Gilet, P., Grosse, P., Poncet, S., Chelnokov, A., Gérard, J. M., Bourgeois, G., Stevens, R., Hamelin, R., Hammar, M., Berggren, J., Sundgren, P., Vilain, S., Bouillard, J. S., Lerondel, G., Bachelot, R., & Royer, P. Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs

• Presentation Conference Type: Conference Paper (published)
• Publication Date: Aug 9, 2006
• Deposit Date: Dec 14, 2021
• Journal: Proceedings of SPIE - The International Society for Optical Engineering
• Print ISSN: 0277-786X
• Publisher: Society of Photo-optical Instrumentation Engineers
• Peer Reviewed: Peer Reviewed
• Volume: 6185
• ISBN: 0819462411; 9780819462411
• DOI: https://doi.org/10.1117/12.662118
• Public URL: https://hull-repository.worktribe.com/output/3566019