Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs
(2006)
Presentation / Conference Contribution
Pougeoise, E., Gilet, P., Grosse, P., Poncet, S., Chelnokov, A., Gérard, J. M., Bourgeois, G., Stevens, R., Hamelin, R., Hammar, M., Berggren, J., Sundgren, P., Vilain, S., Bouillard, J. S., Lerondel, G., Bachelot, R., & Royer, P. Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs
In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-... Read More about Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs.