Room temperature photoluminescence at 4.5 μm from InAsN
(2008)
Journal Article
Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T., & Haywood, S. K. (2008). Room temperature photoluminescence at 4.5 μm from InAsN. Journal of applied physics, 103(6), 063520. https://doi.org/10.1063/1.2896638
Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitroge... Read More about Room temperature photoluminescence at 4.5 μm from InAsN.