Room temperature photoluminescence at 4.5 μm from InAsN

Zhuang, Q.; Godenir, A. M R; Krier, A.; Lai, K. T.; Haywood, S. K.

Abstract

Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4 K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5 μm is obtained.

Citation

Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T., & Haywood, S. K. (2008). Room temperature photoluminescence at 4.5 μm from InAsN. Journal of applied physics, 103(6), 063520. https://doi.org/10.1063/1.2896638

• Journal Article Type: Article
• Acceptance Date: Jan 1, 2008
• Publication Date: Mar 15, 2008
• Deposit Date: Nov 13, 2014
• Publicly Available Date: Nov 13, 2014
• Journal: Journal of applied physics
• Print ISSN: 0021-8979
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 103
• Issue: 6
• Pages: 063520
• DOI: https://doi.org/10.1063/1.2896638
• Keywords: Photoluminescence, Electron hole recombination, Band gap III-V semiconductors, Molecular beam epitaxy
• Public URL: https://hull-repository.worktribe.com/output/460489
• Publisher URL: http://scitation.aip.org/content/aip/journal/jap/103/6/10.1063/1.2896638
• Additional Information: Copy of article: Room temperature photoluminescence at 4.5μm from InAsN / Zhuang, Q. and Godenir, A. M. R. and Krier, A. and Lai, K. T. and Haywood, S. K., Journal of Applied Physics, 103, 063520 (2008), DOI:http://dx.doi.org/10.1063/1.2896638
• Contract Date: Nov 13, 2014