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Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy

Krier, A.; Smirnov, V. M.; Batty, P. J.; Yin, M.; Lai, K. T.; Rybchenko, S.; Haywood, S. K.; Vasil'ev, V. I.; Gagis, G. S.; Kuchinskii, V. I.

Authors

A. Krier

V. M. Smirnov

P. J. Batty

M. Yin

K. T. Lai

S. K. Haywood S.K.Haywood@hull.ac.uk

V. I. Vasil'ev

G. S. Gagis

V. I. Kuchinskii



Abstract

Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4 μm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation. © 2007 American Institute of Physics.

Citation

Krier, A., Smirnov, V. M., Batty, P. J., Yin, M., Lai, K. T., Rybchenko, S., …Kuchinskii, V. I. (2007). Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. Applied physics letters, 91(8), 082102. doi:10.1063/1.2768892

Journal Article Type Article
Acceptance Date Jul 1, 2007
Publication Date Aug 31, 2007
Publicly Available Date
Journal APPLIED PHYSICS LETTERS
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 91
Issue 8
Article Number ARTN 082102
Pages 082102
DOI https://doi.org/10.1063/1.2768892
Keywords Physics and Astronomy (miscellaneous)
Public URL https://hull-repository.worktribe.com/output/391128
Publisher URL https://aip.scitation.org/doi/10.1063/1.2768892