Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy

Krier, A.; Smirnov, V. M.; Batty, P. J.; Yin, M.; Lai, K. T.; Rybchenko, S.; Haywood, S. K.; Vasil'ev, V. I.; Gagis, G. S.; Kuchinskii, V. I.

Abstract

Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4 μm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation. © 2007 American Institute of Physics.

Citation

Krier, A., Smirnov, V. M., Batty, P. J., Yin, M., Lai, K. T., Rybchenko, S., Haywood, S. K., Vasil'ev, V. I., Gagis, G. S., & Kuchinskii, V. I. (2007). Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. Applied physics letters, 91(8), 082102. https://doi.org/10.1063/1.2768892

• Journal Article Type: Article
• Acceptance Date: Jul 1, 2007
• Publication Date: Aug 31, 2007
• Journal: APPLIED PHYSICS LETTERS
• Print ISSN: 0003-6951
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 91
• Issue: 8
• Article Number: ARTN 082102
• Pages: 082102
• DOI: https://doi.org/10.1063/1.2768892
• Keywords: Physics and Astronomy (miscellaneous)
• Public URL: https://hull-repository.worktribe.com/output/391128
• Publisher URL: https://aip.scitation.org/doi/10.1063/1.2768892