Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-xNx/GaAs (x<1%) stepped quantum well

Hill, G.; Hopkinson, M.; Steer, M. J.; Gupta, R.; Lim, A. C.H.; Haywood, S. K.

Abstract

The authors present room temperature photoluminescence and photocurrent measurements on a three layer GaAsNGaAs Al0.35 Ga0.65 As (N≤1%) stepped quantum well. A blueshift in the ground state transition energy is observed with the application of an electric field. A net blueshift of > 10 meV was obtained at 40 kVcm. These results suggest a type II band lineup in the GaAsNGaAs heterojunction for nitrogen compositions below 1%. © 2006 American Institute of Physics.

Citation

Hill, G., Hopkinson, M., Steer, M. J., Gupta, R., Lim, A. C., & Haywood, S. K. (2006). Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-xNx/GaAs (x

• Journal Article Type: Article
• Acceptance Date: Nov 1, 2006
• Publication Date: Dec 25, 2006
• Journal: APPLIED PHYSICS LETTERS
• Print ISSN: 0003-6951
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 89
• Issue: 26
• Pages: 261110
• DOI: https://doi.org/10.1063/1.2424278
• Keywords: Physics and Astronomy (miscellaneous)
• Public URL: https://hull-repository.worktribe.com/output/391624