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Tuning of electronic coupling between self-assembled quantum dots

Rybchenko, Sergey; Itskevich, Igor; Skolnick, M. S.; Cahill, J; Tartakovskii, A. I.; Itskevich, IE; Hill, G; Rybchenko, SI; Hopkinson, M

Authors

Igor Itskevich I.Itskevich@hull.ac.uk

M. S. Skolnick

J Cahill

A. I. Tartakovskii

IE Itskevich

G Hill

SI Rybchenko

M Hopkinson

Abstract

Semiconductor self-assembled quantum dots (SAQDs) normally have zero-dimensional properties, but become coupled and acquire higher-dimensional character if the distance between the dots is small. Using photoluminescence spectroscopy under high hydrostatic pressure, we have obtained clear evidence for electronic coupling due to quantum-mechanical tunneling in stacks of InGaAs/GaAs SAQDs. We demonstrate that application of pressure allows controllable tuning and suppression of the electronic coupling. The effect originates from a pressure-induced increase in the effective mass of Gamma-electrons and a related increase in the interdot-barrier height. (c) 2005 American Institute of Physics.

Journal Article Type Article
Publication Date Jun 18, 2005
Journal APPLIED PHYSICS LETTERS
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 87
Issue 3
Article Number ARTN 033104
Pages 033104
Institution Citation Rybchenko, S., Itskevich, I., Skolnick, M. S., Cahill, J., Tartakovskii, A. I., Hill, G., & Hopkinson, M. (2005). Tuning of electronic coupling between self-assembled quantum dots. Applied physics letters, 87(3), 033104. doi:10.1063/1.1995953
DOI https://doi.org/10.1063/1.1995953
Keywords Physics and Astronomy (miscellaneous)