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Tuning of electronic coupling between self-assembled quantum dots

Rybchenko, Sergey; Itskevich, Igor; Skolnick, M. S.; Cahill, J; Tartakovskii, A. I.; Itskevich, IE; Hill, G; Rybchenko, SI; Hopkinson, M


Igor Itskevich

M. S. Skolnick

J Cahill

A. I. Tartakovskii

IE Itskevich

G Hill

SI Rybchenko

M Hopkinson


Semiconductor self-assembled quantum dots (SAQDs) normally have zero-dimensional properties, but become coupled and acquire higher-dimensional character if the distance between the dots is small. Using photoluminescence spectroscopy under high hydrostatic pressure, we have obtained clear evidence for electronic coupling due to quantum-mechanical tunneling in stacks of InGaAs/GaAs SAQDs. We demonstrate that application of pressure allows controllable tuning and suppression of the electronic coupling. The effect originates from a pressure-induced increase in the effective mass of Gamma-electrons and a related increase in the interdot-barrier height. (c) 2005 American Institute of Physics.


Rybchenko, S., Itskevich, I., Skolnick, M. S., Cahill, J., Tartakovskii, A. I., Hill, G., & Hopkinson, M. (2005). Tuning of electronic coupling between self-assembled quantum dots. Applied physics letters, 87(3), 033104.

Journal Article Type Article
Acceptance Date Jun 2, 2005
Online Publication Date Jul 11, 2005
Publication Date Jun 18, 2005
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 87
Issue 3
Article Number ARTN 033104
Pages 033104
Keywords Physics and Astronomy (miscellaneous)
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