Tuning of electronic coupling between self-assembled quantum dots

Rybchenko, Sergey; Itskevich, Igor; Skolnick, M. S.; Cahill, J; Tartakovskii, A. I.; Itskevich, IE; Hill, G; Rybchenko, SI; Hopkinson, M

Abstract

Semiconductor self-assembled quantum dots (SAQDs) normally have zero-dimensional properties, but become coupled and acquire higher-dimensional character if the distance between the dots is small. Using photoluminescence spectroscopy under high hydrostatic pressure, we have obtained clear evidence for electronic coupling due to quantum-mechanical tunneling in stacks of InGaAs/GaAs SAQDs. We demonstrate that application of pressure allows controllable tuning and suppression of the electronic coupling. The effect originates from a pressure-induced increase in the effective mass of Gamma-electrons and a related increase in the interdot-barrier height. (c) 2005 American Institute of Physics.

Citation

Rybchenko, S., Itskevich, I., Skolnick, M. S., Cahill, J., Tartakovskii, A. I., Hill, G., & Hopkinson, M. (2005). Tuning of electronic coupling between self-assembled quantum dots. Applied physics letters, 87(3), 033104. https://doi.org/10.1063/1.1995953

• Journal Article Type: Article
• Acceptance Date: Jun 2, 2005
• Online Publication Date: Jul 11, 2005
• Publication Date: Jun 18, 2005
• Journal: APPLIED PHYSICS LETTERS
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 87
• Issue: 3
• Article Number: ARTN 033104
• Pages: 033104
• DOI: https://doi.org/10.1063/1.1995953
• Keywords: Physics and Astronomy (miscellaneous)
• Public URL: https://hull-repository.worktribe.com/output/391465