Semiconductor self-assembled quantum dots (SAQDs) normally have zero-dimensional properties, but become coupled and acquire higher-dimensional character if the distance between the dots is small. Using photoluminescence spectroscopy under high hydrostatic pressure, we have obtained clear evidence for electronic coupling due to quantum-mechanical tunneling in stacks of InGaAs/GaAs SAQDs. We demonstrate that application of pressure allows controllable tuning and suppression of the electronic coupling. The effect originates from a pressure-induced increase in the effective mass of Gamma-electrons and a related increase in the interdot-barrier height. (c) 2005 American Institute of Physics.
Rybchenko, S., Itskevich, I., Skolnick, M. S., Cahill, J., Tartakovskii, A. I., Hill, G., & Hopkinson, M. (2005). Tuning of electronic coupling between self-assembled quantum dots. Applied physics letters, 87(3), 033104. https://doi.org/10.1063/1.1995953