Study of quantum dot and quantum well photodetectors

Jabarullah, Noor Hafidzah

Abstract

A study of quantum dots-in-well infrared photodetectors (QDIPs) yields results useful for the creation of a two-colour QDIP. Quantum dot infrared photodetectors (QDIPs) have been shown to be a key technology in mid and long wavelength infrared detection due to their potential for normal incidence operation and low dark current. This study investigates infrared detectors based on intersubband transitions in a novel InAs/In0.15 Ga0.85 As/GaAs quantum dots-in-well (DWELL) heterostructure. In the DWELL structure, the InAs quantum dots are placed in an In0.15 Ga0.85 As well, which in turn is placed in GaAs quantum well with In0.1Ga0.9As barrier. The optical properties of the sample have been studied by the means of photoluminescence and photocurrent using fourier transform infrared spectroscopy. Spectrally tuneable response with bias and long wave IR response at 6.2μm and 7.5μm has been observed.

Citation

Jabarullah, N. H. (2010). Study of quantum dot and quantum well photodetectors. (Thesis). University of Hull. Retrieved from https://hull-repository.worktribe.com/output/4209552

• Thesis Type: Thesis
• Deposit Date: Sep 28, 2011
• Publicly Available Date: Feb 22, 2023
• Keywords: Electronic Engineering
• Public URL: https://hull-repository.worktribe.com/output/4209552
• Additional Information: Department of Engineering, University of Hull
• Award Date: Sep 1, 2010