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Enhanced Switching in Solid Polymer Electrolyte Memristor Devices via the addition of Interfacial Barriers and Quantum Dots

Gater, Michael; Adawi, Ali; Kemp, Neil

Authors

Michael Gater

Neil Kemp



Abstract

We report on the electrical effects of single and double polymer (polymethacrylate) barriers on polyethylene oxide (PEO) based memristors. The single barrier device with an active layer embedded with WS2 quantum dots is also investigated. The addition of a single PMA barrier yields multi cross point current-voltage hysteresis while the addition of embedded quantum dots removes multi-cross point behavior and shows repeatable uni-polar switching with the device starting in the low resistive state (LRS). The device shows some capability of reversible unipolar to bipolar operation as a function of applied voltage and device rest time. The addition of a double PMA barrier produces a reproducible unipolar switching behavior and a unipolar negative differential resistance behavior at higher voltage operation.

Citation

Gater, M., Adawi, A., & Kemp, N. (2023). Enhanced Switching in Solid Polymer Electrolyte Memristor Devices via the addition of Interfacial Barriers and Quantum Dots. In NANOARCH '23: Proceedings of the 18th ACM International Symposium on Nanoscale Architectures. https://doi.org/10.1145/3611315.3633275

Conference Name NANOARCH 2023: IEEE/ACM International Symposium on Nanoscale Architectures
Conference Location Dresden, Germany
Start Date Dec 18, 2023
End Date Dec 20, 2023
Acceptance Date Oct 24, 2023
Online Publication Date Jan 25, 2024
Publication Date 2023-12
Deposit Date Mar 8, 2024
Publisher Association for Computing Machinery (ACM)
Book Title NANOARCH '23: Proceedings of the 18th ACM International Symposium on Nanoscale Architectures
Chapter Number 37
ISBN 9798400703256
DOI https://doi.org/10.1145/3611315.3633275
Public URL https://hull-repository.worktribe.com/output/4548875