Phonon-plasmon coupled-mode lifetime in semiconductors

Dyson, A.; Ridley, B. K.

Abstract

Raman scattering measurements of the lifetime of hot phonons in GaN show a decrease with increasing electron concentration. Density-dependent lifetimes have also been deduced from noise measurements of AlGaN/GaN channels. We suggest that the results from Raman scattering can be understood by the frequency dependence of the anharmonic interaction for coupled modes and that the results from noise measurements can be understood qualitatively by the anharmonic interaction plus the migration of coupled modes. © 2008 American Institute of Physics.

Citation

Dyson, A., & Ridley, B. K. (2008). Phonon-plasmon coupled-mode lifetime in semiconductors. Journal of applied physics, 103(11), 114507. https://doi.org/10.1063/1.2937918

• Journal Article Type: Article
• Acceptance Date: Apr 1, 2008
• Publication Date: Jun 20, 2008
• Deposit Date: Nov 13, 2014
• Journal: Journal Of Applied Physics
• Print ISSN: 0021-8979
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 103
• Issue: 11
• Article Number: ARTN 114507
• Pages: 114507
• DOI: https://doi.org/10.1063/1.2937918
• Keywords: General Physics and Astronomy
• Public URL: https://hull-repository.worktribe.com/output/460591
• Contract Date: Nov 13, 2014