Skip to main content

Research Repository

Advanced Search

Negative differential resistance associated with hot phonons

Dyson, A.; Ridley, B. K.

Authors

A. Dyson

B. K. Ridley



Abstract

We predict the existence of a hot-phonon negative differential resistance (NDR) in GaN. We show that this is a consequence of a wave-vector dependence of lifetime caused by the effect of coupled plasmon-phonons. Anti-screened long-wavelength modes have shorter lifetimes, screened shorter-wavelength modes have longer lifetimes, the boundary between them being determined by the temperature-dependent Landau damping. The higher density of screened modes means that the average lifetime is of order of the lifetime of the bare phonon. Its increase with electron temperature (field) is responsible for the NDR. We also find that the momentum relaxation rate (MRR) associated with the absorption of phonons can be negative in some circumstances, which can be seen to be a consequence of the non-uniform distribution of hot phonons in wave-vector space. We also point out that the ultra-short lifetimes sometimes deduced from experiment should more properly be regarded as electron energy- relaxation times.

Citation

Dyson, A., & Ridley, B. K. (2012). Negative differential resistance associated with hot phonons. Journal of applied physics, 112(6), (063707). doi:10.1063/1.4754012. ISSN 0021-8979

Journal Article Type Article
Acceptance Date Aug 1, 2012
Online Publication Date Sep 20, 2012
Publication Date Sep 15, 2012
Deposit Date Nov 13, 2014
Publicly Available Date Jul 18, 2018
Journal Journal Of Applied Physics
Print ISSN 0021-8979
Electronic ISSN 1089-7550
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 112
Issue 6
Article Number 063707
Pages 063707
DOI https://doi.org/10.1063/1.4754012
Public URL https://hull-repository.worktribe.com/output/467381
Publisher URL https://aip.scitation.org/doi/abs/10.1063/1.4754012

Files






You might also like



Downloadable Citations