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Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices

Alharthi, F. A.; Cheng, F.; Verrelli, E.; Kemp, N. T.; Lee, A. F.; Isaacs, M. A.; O’Neill, M.; Kelly, S. M.

Authors

F. A. Alharthi

F. Cheng

A. F. Lee

M. A. Isaacs

M. O’Neill



Abstract

We report for the first time the one-step synthesis of solution-processable, highly crystalline, niobiumdoped titanium dioxide (Nb-TiO2) nanorods in the anatase phase by the hydrolytic condensation of Ti(OiPr)4 and niobium(V) ethoxide using oleic acid as a structure-directing and stabilising agent. These novel surface-stabilised nanorods can be easily dispersed in common solvents at relatively high concentration (B10%) and deposited as uniform, thin and transparent films on planar substrates for the fabrication of electronic devices. The small size of the nanoparticles synthesized represents an important advance in achieving high-k dielectric thin films smooth enough to be suitable for OFET applications and the plastic electronics filed in general. Preliminary investigations show that the dielectric constant, k, of niobium-doped (7.1 wt%) titanium dioxide (Nb-TiO2) nanorods at frequencies in the region of 100 kHz–1 MHz, are more a third greater (k 4 8) than that (k = 6) determined for the corresponding undoped titanium dioxide (TiO2) nanorods. The current–voltage (J–V) behaviour of these devices reveal that niobium-doping improves, by reducing, the leakage current of these devices, thereby preventing hard dielectric breakdown of devices incorporating these new nanorods.

Journal Article Type Article
Publication Date Dec 28, 2017
Journal Journal of Materials Chemistry C
Print ISSN 2050-7526
Electronic ISSN 2050-7534
Publisher Royal Society of Chemistry
Peer Reviewed Peer Reviewed
Volume 6
Issue 5
Pages 1038-1047
APA6 Citation Alharthi, F. A., Cheng, F., Verrelli, E., Kemp, N. T., Lee, A. F., Isaacs, M. A., …Kelly, S. M. (2017). Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices. Journal of materials chemistry. publ. by The Royal Society of Chemistry. C, Materials for optical and electronic devices /, 6(5), 1038-1047. https://doi.org/10.1039/c7tc04197g
DOI https://doi.org/10.1039/c7tc04197g
Keywords Materials Chemistry; General Chemistry
Publisher URL http://pubs.rsc.org/en/Content/ArticleLanding/2018/TC/C7TC04197G#!divAbstract
Additional Information : This document is Similarity Check deposited; CrossRef DOI Link to Correction:: https://doi.org/10.1039/C8TC90038H; : N. T. Kemp (ORCID); : N. T. Kemp (ResearcherID); : A. F. Lee (ORCID); : A. F. Lee (ResearcherID); : M. A. Isaacs (ORCID); : M. A. Isaacs (ResearcherID); : S. M. Kelly (ORCID); : Single-blind; : Received 13 September 2017; Accepted 27 December 2017; Accepted Manuscript published 28 December 2017; Advance Article published 17 January 2018; Version of Record published 1 February 2018

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