Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices
Presentation / Conference Contribution
Gater, M., Adawi, A. M., & Kemp, N. T. (2022, May). Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices. Presented at 2022 IEEE International Symposium on Circuits and Systems (ISCAS), Austin, Texas
We report on the electrical properties of gated two-terminal multilayered molybdenum disulfide (MoS2) memristor devices having a planar architecture. The approach based on highly dispersed MoS2 flakes drop cast onto a bottom gated Si/SiO2 (100nm) waf... Read More about Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices.