Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices

Gater, M; Adawi, A M; Kemp, N T

Abstract

We report on the electrical properties of gated two-terminal multilayered molybdenum disulfide (MoS2) memristor devices having a planar architecture. The approach based on highly dispersed MoS2 flakes drop cast onto a bottom gated Si/SiO2 (100nm) wafer containing metal Pd contact electrodes yields devices that exhibit a number of complex properties including memristive and capacitive effects as well as multiple non-zero-crossing current-voltage hysteresis effects. The devices also show a reaction to a varying gate bias. An increasingly positive gate led to the devices displaying a linear ohmic I-V response while an increasingly negative gate bias drove the system to behave more memristive with a widening hysteresis loop.

Citation

Gater, M., Adawi, A. M., & Kemp, N. T. (2022, May). Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices. Presented at 2022 IEEE International Symposium on Circuits and Systems (ISCAS), Austin, Texas

• Presentation Conference Type: Conference Paper (published)
• Conference Name: 2022 IEEE International Symposium on Circuits and Systems (ISCAS)
• Start Date: May 28, 2022
• End Date: Jun 1, 2022
• Acceptance Date: Jan 14, 2022
• Online Publication Date: Nov 11, 2022
• Publication Date: 2022
• Deposit Date: Jun 27, 2022
• Publicly Available Date: Nov 12, 2024
• Publisher: Institute of Electrical and Electronics Engineers
• Pages: 225-229
• Book Title: 2022 IEEE International Symposium on Circuits and Systems (ISCAS)
• ISBN: 978-1-6654-8485-5
• DOI: https://doi.org/10.1109/ISCAS48785.2022.9937227
• Keywords: Memristor; Capacitance; Memtransistor; Three- terminal; Transition metal dichalcogenides; MoS2
• Public URL: https://hull-repository.worktribe.com/output/4020632