Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices
Gater, M; Adawi, A M; Kemp, N T
Dr Ali Adawi A.Adawi@hull.ac.uk
Reader in Physics
N T Kemp
We report on the electrical properties of gated two-terminal multilayered molybdenum disulfide (MoS2) memristor devices having a planar architecture. The approach based on highly dispersed MoS2 flakes drop cast onto a bottom gated Si/SiO2 (100nm) wafer containing metal Pd contact electrodes yields devices that exhibit a number of complex properties including memristive and capacitive effects as well as multiple non-zero-crossing current-voltage hysteresis effects. The devices also show a reaction to a varying gate bias. An increasingly positive gate led to the devices displaying a linear ohmic I-V response while an increasingly negative gate bias drove the system to behave more memristive with a widening hysteresis loop.
Gater, M., Adawi, A. M., & Kemp, N. T. (2022). Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices. In 2022 IEEE International Symposium on Circuits and Systems (ISCAS) (225-229). https://doi.org/10.1109/ISCAS48785.2022.9937227
|Conference Name||2022 IEEE International Symposium on Circuits and Systems (ISCAS)|
|Conference Location||Austin, Texas|
|Start Date||May 28, 2022|
|End Date||Jun 1, 2022|
|Acceptance Date||Jan 14, 2022|
|Online Publication Date||Nov 11, 2022|
|Deposit Date||Jun 27, 2022|
|Publicly Available Date||Nov 12, 2024|
|Publisher||Institute of Electrical and Electronics Engineers|
|Book Title||2022 IEEE International Symposium on Circuits and Systems (ISCAS)|
|Keywords||Memristor; Capacitance; Memtransistor; Three- terminal; Transition metal dichalcogenides; MoS2|
This file is under embargo until Nov 12, 2024 due to copyright reasons.
Contact A.Adawi@hull.ac.uk to request a copy for personal use.
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