L-band-related interband transition in InSb/GaSb self-assembled quantum dots

Rybchenko, S. I.; Gupta, R.; Itskevich, I. E.; Haywood, S. K.

doi:10.1007/978-1-4020-8425-6_20

All Outputs (3)

Performance and Optimisation of Microfluidic Channels with Acute Angles and Serpentine Curvatures (2024)
Book Chapter
Saadat, M., Hughes, A., Jungclaussen, A., Hajiyavand, A., Poologasundarampillai, G., Moetazedian, A., & Malboubi, M. (2024). Performance and Optimisation of Microfluidic Channels with Acute Angles and Serpentine Curvatures. In M.-R. Alam, & M. Fathi (Eds.), . Springer Nature Switzerland. https://doi.org/10.1007/978-3-031-53652-6_5

Integrating user-centred design in the development of a silent speech interface based on permanent magnetic articulography (2015)
Book Chapter
Cheah, L. A., Gilbert, J. M., Gonzalez, J. A., Bai, J., Ell, S. R., Fagan, M. J., Moore, R. K., Green, P. D., & Rychenko, S. I. (2015). Integrating user-centred design in the development of a silent speech interface based on permanent magnetic articulography. In Biomedical Engineering Systems and Technologies; Communications in Computer and Information Science (324-337). Springer Verlag. https://doi.org/10.1007/978-3-319-27707-3_20

Abstract: A new wearable silent speech interface (SSI) based on Permanent Magnetic Articulography (PMA) was developed with the involvement of end users in the design process. Hence, desirable features such as appearance, port-ability, ease of use and... Read More about Integrating user-centred design in the development of a silent speech interface based on permanent magnetic articulography.

L-band-related interband transition in InSb/GaSb self-assembled quantum dots (2008)
Book Chapter
Rybchenko, S. I., Gupta, R., Itskevich, I. E., & Haywood, S. K. (2008). L-band-related interband transition in InSb/GaSb self-assembled quantum dots. In Springer Proceedings in Physics; Narrow Gap Semiconductors 2007 (81-83). Springer Verlag. https://doi.org/10.1007/978-1-4020-8425-6_20

Effect of lattice-mismatch-induced strain on Γ-, X- and L-conduction-band edges in III-V self-assembled quantum dots has been calculated. The misfit strain is shown to strongly affect the band edges, leading to a possibility of Γ-L and Γ-X crossover.... Read More about L-band-related interband transition in InSb/GaSb self-assembled quantum dots.