S. I. Rybchenko
L-band-related interband transition in InSb/GaSb self-assembled quantum dots
Rybchenko, S. I.; Gupta, R.; Itskevich, I. E.; Haywood, S. K.
Authors
R. Gupta
I. E. Itskevich
S. K. Haywood
Abstract
Effect of lattice-mismatch-induced strain on Γ-, X- and L-conduction-band edges in III-V self-assembled quantum dots has been calculated. The misfit strain is shown to strongly affect the band edges, leading to a possibility of Γ-L and Γ-X crossover. The Γ-L crossover is predicted for realistic self-assembled InSb/GaSb (001) dots, in which the lowest interband transition is from the L-valley state. Available experimental PL data were found to be in good agreement with the crossover phenomenon.
Citation
Rybchenko, S. I., Gupta, R., Itskevich, I. E., & Haywood, S. K. (2008). L-band-related interband transition in InSb/GaSb self-assembled quantum dots. In Springer Proceedings in Physics; Narrow Gap Semiconductors 2007 (81-83). Springer Verlag. https://doi.org/10.1007/978-1-4020-8425-6_20
Publication Date | Dec 31, 2008 |
---|---|
Print ISSN | 0930-8989 |
Publisher | Springer Verlag |
Peer Reviewed | Peer Reviewed |
Volume | 119 |
Pages | 81-83 |
Book Title | Springer Proceedings in Physics; Narrow Gap Semiconductors 2007 |
ISBN | 9781402084249; 9781402084256 |
DOI | https://doi.org/10.1007/978-1-4020-8425-6_20 |
Public URL | https://hull-repository.worktribe.com/output/405569 |
Publisher URL | https://link.springer.com/chapter/10.1007%2F978-1-4020-8425-6_20 |
Contract Date | Dec 31, 2008 |
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