L-band-related interband transition in InSb/GaSb self-assembled quantum dots

Rybchenko, S. I.; Gupta, R.; Itskevich, I. E.; Haywood, S. K.

Abstract

Effect of lattice-mismatch-induced strain on Γ-, X- and L-conduction-band edges in III-V self-assembled quantum dots has been calculated. The misfit strain is shown to strongly affect the band edges, leading to a possibility of Γ-L and Γ-X crossover. The Γ-L crossover is predicted for realistic self-assembled InSb/GaSb (001) dots, in which the lowest interband transition is from the L-valley state. Available experimental PL data were found to be in good agreement with the crossover phenomenon.

• Publication Date: Dec 31, 2008
• Print ISSN: 0930-8989
• Publisher: Springer Verlag
• Peer Reviewed: Peer Reviewed
• Volume: 119
• Pages: 81-83
• Book Title: Springer Proceedings in Physics; Narrow Gap Semiconductors 2007
• ISBN: 9781402084249; 9781402084256
• APA6 Citation: Rybchenko, S. I., Gupta, R., Itskevich, I. E., & Haywood, S. K. (2008). L-band-related interband transition in InSb/GaSb self-assembled quantum dots. Springer Proceedings in Physics; Narrow Gap Semiconductors 2007, 81-83. Springer Verlag. doi:10.1007/978-1-4020-8425-6_20
• DOI: https://doi.org/10.1007/978-1-4020-8425-6_20
• Publisher URL: https://link.springer.com/chapter/10.1007%2F978-1-4020-8425-6_20