Characterization of thermal dissipation within integrated gate bipolar transistor (IGBT) layered packaging structure
(2008)
Thesis
Lim, D. J. (2008). Characterization of thermal dissipation within integrated gate bipolar transistor (IGBT) layered packaging structure. (Thesis). University of Hull. Retrieved from https://hull-repository.worktribe.com/output/4208848
Integrated Gate Bipolar Transistors (IGBTs) generally have a high output power and generate significant amounts of heat, which needs to be removed from the chip to ensure continued operation. Since IGBT chips are commonly mounted on a layered assembl... Read More about Characterization of thermal dissipation within integrated gate bipolar transistor (IGBT) layered packaging structure.