L-band-related interband transition in InSb/GaSb self-assembled quantum dots
(2008)
Book Chapter
Rybchenko, S. I., Gupta, R., Itskevich, I. E., & Haywood, S. K. (2008). L-band-related interband transition in InSb/GaSb self-assembled quantum dots. In Springer Proceedings in Physics; Narrow Gap Semiconductors 2007 (81-83). Springer Verlag. https://doi.org/10.1007/978-1-4020-8425-6_20
Effect of lattice-mismatch-induced strain on Γ-, X- and L-conduction-band edges in III-V self-assembled quantum dots has been calculated. The misfit strain is shown to strongly affect the band edges, leading to a possibility of Γ-L and Γ-X crossover.... Read More about L-band-related interband transition in InSb/GaSb self-assembled quantum dots.