Stark shift in electroluminescence of individual InAs quantum dots

Itskevich, IE; Rybchenko, Sergey; Itskevich, Igor; Tartakovskii, II; Stoddart, ST; Levin, A; Main, PC; Eaves, L; Rybchenko, SI; Henini, M; Parnell, S

Abstract

We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assembled quantum dots is embedded, with an active area of submicron size. In the electroluminescence spectra of these devices, we observed isolated narrow peaks due to emission from individual dots. From the shift of the peaks in an electric field (the quantum confined Stark effect), we show that the ground and excited states in the dots have different spatial alignments of the electron and hole. (C) 2000 American Institute of Physics. [S0003-6951(00)02526-2].

Citation

Itskevich, I., Rybchenko, S., Tartakovskii, I., Stoddart, S., Levin, A., Main, P., Eaves, L., Henini, M., & Parnell, S. (in press). Stark shift in electroluminescence of individual InAs quantum dots. Applied physics letters, 76(26), 3932-3934. https://doi.org/10.1063/1.126825

• Journal Article Type: Article
• Acceptance Date: May 1, 2000
• Online Publication Date: Jun 20, 2000
• Journal: APPLIED PHYSICS LETTERS
• Print ISSN: 0003-6951
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 76
• Issue: 26
• Article Number: PII [S0003-6951(00)02526-2]
• Pages: 3932-3934
• DOI: https://doi.org/10.1063/1.126825
• Public URL: https://hull-repository.worktribe.com/output/391378