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Stark shift in electroluminescence of individual InAs quantum dots

Itskevich, IE; Rybchenko, Sergey; Itskevich, Igor; Tartakovskii, II; Stoddart, ST; Levin, A; Main, PC; Eaves, L; Rybchenko, SI; Henini, M; Parnell, S


II Tartakovskii

ST Stoddart

A Levin

PC Main

L Eaves

SI Rybchenko

M Henini

S Parnell


We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assembled quantum dots is embedded, with an active area of submicron size. In the electroluminescence spectra of these devices, we observed isolated narrow peaks due to emission from individual dots. From the shift of the peaks in an electric field (the quantum confined Stark effect), we show that the ground and excited states in the dots have different spatial alignments of the electron and hole. (C) 2000 American Institute of Physics. [S0003-6951(00)02526-2].

Journal Article Type Article
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 76
Issue 26
Article Number PII [S0003-6951(00)02526-2]
Pages 3932-3934
APA6 Citation Itskevich, I., Rybchenko, S., Tartakovskii, I., Stoddart, S., Levin, A., Main, P., …Parnell, S. (in press). Stark shift in electroluminescence of individual InAs quantum dots. Applied physics letters, 76(26), 3932-3934. doi:10.1063/1.126825