Skip to main content

Electron hopping rate measurements in ITO junctions: charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate- TiO2 film

Haga, Masa-aki; Dale, Sara E C; Dale, Sara E. C.; Wadhawan, Jay; Cummings, Charles Y.; Wadhawan, Jay D.; Nakabayashi, Takuya; Haga, Masa Aki; Rassaei, Liza; Dale, Sara E.C.; Bending, Simon; Pumera, Martin; Parker, Stephen C.; Marken, Frank

Authors

Masa-aki Haga

Sara E C Dale

Sara E. C. Dale

Charles Y. Cummings

Takuya Nakabayashi

Masa Aki Haga

Liza Rassaei

Sara E.C. Dale

Simon Bending

Martin Pumera

Stephen C. Parker

Frank Marken



Abstract

Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator - collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl) pyridine-phosphonate (as the negative component) and nanoparticulate TiO2 (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. Dapp = 2 (} 1) 1015 m2 s1 was observed with minimal contributions from intra-molecular Ru-Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted.

Journal Article Type Article
Publication Date Jul 1, 2011
Journal JOURNAL OF ELECTROANALYTICAL CHEMISTRY
Print ISSN 1572-6657
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 657
Issue 1-2
Pages 196-201
APA6 Citation Cummings, C. Y., Wadhawan, J. D., Nakabayashi, T., Haga, M. A., Rassaei, L., Dale, S. E., …Marken, F. (2011). Electron hopping rate measurements in ITO junctions: charge diffusion in a layer-by-layer deposited ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate- TiO2 film. Journal of Electroanalytical Chemistry, 657(1-2), (196-201). doi:10.1016/j.jelechem.2011.04.010. ISSN 1572-6657
DOI https://doi.org/10.1016/j.jelechem.2011.04.010
Keywords Voltammetry; Layer-by-layer assembly; Electron hopping; Diffusion; Focused ion beam; Sensor
Publisher URL https://www.sciencedirect.com/science/article/pii/S1572665711001986?via%3Dihub
;