Conduction-band crossover induced by misfit strain in InSb/GaSb self-assembled quantum dots

Rybchenko, S. I.; Gupta, R.; Lai, K. T.; Itskevich, I. E.; Haywood, S. K.; Tasco, V.; Deguffroy, N.; Baranov, A. N.; Tournié, E.

Abstract

We address the occurrence of conduction-band crossover in III-V self-assembled quantum dots solely due to misfit strain. Band structure analysis in terms of standard deformation-potential theory shows that Γ-X crossover can occur in the dot, while both Γ-X and Γ-L crossovers are possible in the matrix at the interface. Crossover changes the nature of the fundamental band gap in the heterostructure, which may dramatically affect the optical properties. The implications of this are studied for a realistic InSbGaSb (001) heterostructure, where Γ-L crossover renders the ground-state optical transition indirect in k space. Our calculations and photoluminescence data are in remarkable agreement. © 2007 The American Physical Society.

Citation

Rybchenko, S. I., Gupta, R., Lai, K. T., Itskevich, I. E., Haywood, S. K., Tasco, V., Deguffroy, N., Baranov, A. N., & Tournié, E. (2007). Conduction-band crossover induced by misfit strain in InSb/GaSb self-assembled quantum dots. Physical review B: Condensed matter and materials physics, 76(19), 0 - 0. https://doi.org/10.1103/physrevb.76.193309

• Journal Article Type: Article
• Acceptance Date: Nov 20, 2007
• Online Publication Date: Nov 20, 2007
• Publication Date: Nov 20, 2007
• Journal: PHYSICAL REVIEW B
• Print ISSN: 1098-0121
• Publisher: American Physical Society
• Peer Reviewed: Peer Reviewed
• Volume: 76
• Issue: 19
• Article Number: ARTN 193309
• Pages: 0 - 0
• DOI: https://doi.org/10.1103/physrevb.76.193309
• Keywords: Electronic, Optical and Magnetic Materials; Condensed Matter Physics
• Public URL: https://hull-repository.worktribe.com/output/395990