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Conduction-band crossover induced by misfit strain in InSb/GaSb self-assembled quantum dots

Rybchenko, S. I.; Gupta, R.; Lai, K. T.; Itskevich, I. E.; Haywood, S. K.; Tasco, V.; Deguffroy, N.; Baranov, A. N.; Tournié, E.


R. Gupta

K. T. Lai

S. K. Haywood

V. Tasco

N. Deguffroy

A. N. Baranov

E. Tournié


We address the occurrence of conduction-band crossover in III-V self-assembled quantum dots solely due to misfit strain. Band structure analysis in terms of standard deformation-potential theory shows that Γ-X crossover can occur in the dot, while both Γ-X and Γ-L crossovers are possible in the matrix at the interface. Crossover changes the nature of the fundamental band gap in the heterostructure, which may dramatically affect the optical properties. The implications of this are studied for a realistic InSbGaSb (001) heterostructure, where Γ-L crossover renders the ground-state optical transition indirect in k space. Our calculations and photoluminescence data are in remarkable agreement. © 2007 The American Physical Society.


Rybchenko, S. I., Gupta, R., Lai, K. T., Itskevich, I. E., Haywood, S. K., Tasco, V., …Tournié, E. (2007). Conduction-band crossover induced by misfit strain in InSb/GaSb self-assembled quantum dots. Physical review B: Condensed matter and materials physics, 76(19), 0 - 0. doi:10.1103/physrevb.76.193309

Journal Article Type Article
Acceptance Date Nov 20, 2007
Online Publication Date Nov 20, 2007
Publication Date Nov 20, 2007
Print ISSN 1098-0121
Electronic ISSN 1550-235X
Publisher American Physical Society
Peer Reviewed Peer Reviewed
Volume 76
Issue 19
Article Number ARTN 193309
Pages 0 - 0
Keywords Electronic, Optical and Magnetic Materials; Condensed Matter Physics
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