Magnetoresistance signature of resonant states in electromigrated Ni nanocontacts

Beaufrand, J. -B.; Dayen, J. -F.; Kemp, Neil; Beaufrand, J. B.; Dayen, J. F.; Kemp, N. T.; Sokolov, A.; Doudin, B.

Abstract

Fundamental insight is reported into magnetoresistance properties of ballistic-type atomic size Ni nanojunctions obtained at low temperatures. Feedback-controlled electromigration was used to reveal the ballistic nature of the transport and stabilize samples of conductance values in the range of G 0 (G 0 =2e 2 /h). Bias voltage dependent measurements identify a clear magnetoresistance fingerprint of resonant tunneling, revealing that localized states in the nanojunctions can be responsible for nonlinear behavior in the IV curves and the related magnetoresistance properties. © 2011 American Institute of Physics.

Citation

Beaufrand, J. B., Dayen, J. F., Kemp, N. T., Sokolov, A., & Doudin, B. (2011). Magnetoresistance signature of resonant states in electromigrated Ni nanocontacts. Applied physics letters, 98(14), 142504-1 - 142504-3. https://doi.org/10.1063/1.3576939

• Journal Article Type: Article
• Acceptance Date: Apr 4, 2011
• Online Publication Date: Apr 6, 2011
• Publication Date: Mar 4, 2011
• Journal: APPLIED PHYSICS LETTERS
• Print ISSN: 0003-6951
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 98
• Issue: 14
• Article Number: ARTN 142504
• Pages: 142504-1 - 142504-3
• DOI: https://doi.org/10.1063/1.3576939
• Keywords: Physics and Astronomy (miscellaneous)
• Public URL: https://hull-repository.worktribe.com/output/400155