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Magnetoresistance signature of resonant states in electromigrated Ni nanocontacts

Beaufrand, J. -B.; Dayen, J. -F.; Kemp, Neil; Beaufrand, J. B.; Dayen, J. F.; Kemp, N. T.; Sokolov, A.; Doudin, B.

Authors

J. -B. Beaufrand

J. -F. Dayen

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Dr Neil Kemp N.Kemp@hull.ac.uk
Director of Postgraduate Researchers (Physics and Mathematics), Senior Lecturer in Physics

J. B. Beaufrand

J. F. Dayen

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Dr Neil Kemp N.Kemp@hull.ac.uk
Director of Postgraduate Researchers (Physics and Mathematics), Senior Lecturer in Physics

A. Sokolov

B. Doudin



Abstract

Fundamental insight is reported into magnetoresistance properties of ballistic-type atomic size Ni nanojunctions obtained at low temperatures. Feedback-controlled electromigration was used to reveal the ballistic nature of the transport and stabilize samples of conductance values in the range of G 0 (G 0 =2e 2 /h). Bias voltage dependent measurements identify a clear magnetoresistance fingerprint of resonant tunneling, revealing that localized states in the nanojunctions can be responsible for nonlinear behavior in the IV curves and the related magnetoresistance properties. © 2011 American Institute of Physics.

Journal Article Type Article
Publication Date Mar 4, 2011
Journal APPLIED PHYSICS LETTERS
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 98
Issue 14
Article Number ARTN 142504
Pages 142504-1 - 142504-3
APA6 Citation Beaufrand, J. B., Dayen, J. F., Kemp, N. T., Sokolov, A., & Doudin, B. (2011). Magnetoresistance signature of resonant states in electromigrated Ni nanocontacts. Applied physics letters, 98(14), 142504-1 - 142504-3. https://doi.org/10.1063/1.3576939
DOI https://doi.org/10.1063/1.3576939
Keywords Physics and Astronomy (miscellaneous)
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