Skip to main content

Study of molecular spin-crossover complex Fe(phen)(2)(NCS)(2) thin films

Shi, S.; Schmerber, G.; Arabski, J.; Beaufrand, J.-B.; Kim, D. J.; Boukari, S.; Bowen, M.; Kemp, N. T.; Viart, N.; Rogez, G.; Beaurepaire, E.; Aubriet, H.; Petersen, J.; Becker, C.; Ruch, D.


S. Shi

G. Schmerber

J. Arabski

J.-B. Beaufrand

D. J. Kim

S. Boukari

M. Bowen

Profile Image

Dr Neil Kemp
Director of Postgraduate Researchers (Physics and Mathematics), Senior Lecturer in Physics

N. Viart

G. Rogez

E. Beaurepaire

H. Aubriet

J. Petersen

C. Becker

D. Ruch


We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)(2)(NCS)(2) (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime, we deduce a mobility of 6.5x10(-6) cm(2)/V s that is similar to the low-range mobility measured on the widely studied tris(8-hydroxyquinoline)aluminum organic semiconductor. This work paves the way for multifunctional molecular devices based on spin-crossover complexes.

Journal Article Type Article
Publication Date Jun 27, 2009
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 95
Issue 4
Article Number ARTN 043303
Pages 043303
APA6 Citation Shi, S., Schmerber, G., Arabski, J., Beaufrand, J., Kim, D. J., Boukari, S., …Ruch, D. (2009). Study of molecular spin-crossover complex Fe(phen)(2)(NCS)(2) thin films. Applied physics letters, 95(4), 043303.
Keywords Molecular electronics; Organic semiconductors; Semiconductor thin films; Vacuum deposition memory devices; Iron(ii) diodes
Publisher URL