Study of molecular spin-crossover complex Fe(phen)(2)(NCS)(2) thin films

Shi, S.; Schmerber, G.; Arabski, J.; Beaufrand, J.-B.; Kim, D. J.; Boukari, S.; Bowen, M.; Kemp, N. T.; Viart, N.; Rogez, G.; Beaurepaire, E.; Aubriet, H.; Petersen, J.; Becker, C.; Ruch, D.

Abstract

We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)(2)(NCS)(2) (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime, we deduce a mobility of 6.5x10(-6) cm(2)/V s that is similar to the low-range mobility measured on the widely studied tris(8-hydroxyquinoline)aluminum organic semiconductor. This work paves the way for multifunctional molecular devices based on spin-crossover complexes.

Citation

Shi, S., Schmerber, G., Arabski, J., Beaufrand, J., Kim, D. J., Boukari, S., …Ruch, D. (2009). Study of molecular spin-crossover complex Fe(phen)(2)(NCS)(2) thin films. Applied physics letters, 95(4), 043303. https://doi.org/10.1063/1.3192355

• Journal Article Type: Article
• Acceptance Date: Jul 27, 2009
• Publication Date: Jun 27, 2009
• Journal: APPLIED PHYSICS LETTERS
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 95
• Issue: 4
• Article Number: ARTN 043303
• Pages: 043303
• DOI: https://doi.org/10.1063/1.3192355
• Keywords: Molecular electronics; Organic semiconductors; Semiconductor thin films; Vacuum deposition memory devices; Iron(ii) diodes
• Public URL: https://hull-repository.worktribe.com/output/400156
• Publisher URL: https://www.sciencedirect.com/science/article/pii/S0301051112001962?via%3Dihub