Study of molecular spin-crossover complex Fe(phen)(2)(NCS)(2) thin films
Shi, S.; Schmerber, G.; Arabski, J.; Beaufrand, J.-B.; Kim, D. J.; Boukari, S.; Bowen, M.; Kemp, N. T.; Viart, N.; Rogez, G.; Beaurepaire, E.; Aubriet, H.; Petersen, J.; Becker, C.; Ruch, D.
D. J. Kim
Dr Neil Kemp N.Kemp@hull.ac.uk
Director of Postgraduate Researchers (Physics and Mathematics), Senior Lecturer in Physics
We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)(2)(NCS)(2) (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime, we deduce a mobility of 6.5x10(-6) cm(2)/V s that is similar to the low-range mobility measured on the widely studied tris(8-hydroxyquinoline)aluminum organic semiconductor. This work paves the way for multifunctional molecular devices based on spin-crossover complexes.
|Journal Article Type||Article|
|Publication Date||Jun 27, 2009|
|Journal||APPLIED PHYSICS LETTERS|
|Peer Reviewed||Peer Reviewed|
|Article Number||ARTN 043303|
|APA6 Citation||Shi, S., Schmerber, G., Arabski, J., Beaufrand, J., Kim, D. J., Boukari, S., …Ruch, D. (2009). Study of molecular spin-crossover complex Fe(phen)(2)(NCS)(2) thin films. Applied physics letters, 95(4), 043303. https://doi.org/10.1063/1.3192355|
|Keywords||Molecular electronics; Organic semiconductors; Semiconductor thin films; Vacuum deposition memory devices; Iron(ii) diodes|
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