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Study of molecular spin-crossover complex Fe(phen)(2)(NCS)(2) thin films

Shi, S.; Schmerber, G.; Arabski, J.; Beaufrand, J.-B.; Kim, D. J.; Boukari, S.; Bowen, M.; Kemp, N. T.; Viart, N.; Rogez, G.; Beaurepaire, E.; Aubriet, H.; Petersen, J.; Becker, C.; Ruch, D.


S. Shi

G. Schmerber

J. Arabski

J.-B. Beaufrand

D. J. Kim

S. Boukari

M. Bowen

N. T. Kemp

N. Viart

G. Rogez

E. Beaurepaire

H. Aubriet

J. Petersen

C. Becker

D. Ruch


We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)(2)(NCS)(2) (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime, we deduce a mobility of 6.5x10(-6) cm(2)/V s that is similar to the low-range mobility measured on the widely studied tris(8-hydroxyquinoline)aluminum organic semiconductor. This work paves the way for multifunctional molecular devices based on spin-crossover complexes.


Shi, S., Schmerber, G., Arabski, J., Beaufrand, J., Kim, D. J., Boukari, S., …Ruch, D. (2009). Study of molecular spin-crossover complex Fe(phen)(2)(NCS)(2) thin films. Applied physics letters, 95(4), 043303.

Journal Article Type Article
Acceptance Date Jul 27, 2009
Publication Date Jun 27, 2009
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 95
Issue 4
Article Number ARTN 043303
Pages 043303
Keywords Molecular electronics; Organic semiconductors; Semiconductor thin films; Vacuum deposition memory devices; Iron(ii) diodes
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