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Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties

Yeap, G. H.; Rybchenko, S. I.; Itskevich, I. E.; Haywood, S. K.

Authors

G. H. Yeap

I. E. Itskevich

S. K. Haywood



Abstract

InSb-based self-assembled quantum dots are very promising for the midinfrared (3-5μm) optical range. We have analyzed the effect of geometry and composition on the electronic structure and optical spectra of InAsx Sb1-x /InAs dots. The calculated transition energies agree well with the available experimental data. The results show that the geometry of the dot can be estimated from the optical spectra if the composition is known, and vice versa. © 2009 The American Physical Society.

Citation

Yeap, G. H., Rybchenko, S. I., Itskevich, I. E., & Haywood, S. K. (2009). Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties. Physical review B: Condensed matter and materials physics, 79(7), 075305-1-075305-6. https://doi.org/10.1103/physrevb.79.075305

Journal Article Type Article
Acceptance Date Nov 12, 2008
Online Publication Date Feb 9, 2009
Publication Date Feb 2, 2009
Deposit Date Nov 13, 2014
Publicly Available Date Mar 29, 2024
Journal Physical review. B
Print ISSN 1098-0121
Electronic ISSN 1550-235X
Publisher American Physical Society
Peer Reviewed Peer Reviewed
Volume 79
Issue 7
Article Number ARTN 075305
Pages 075305-1-075305-6
DOI https://doi.org/10.1103/physrevb.79.075305
Keywords Electronic, Optical and Magnetic Materials; Condensed Matter Physics
Public URL https://hull-repository.worktribe.com/output/461783
Publisher URL http://journals.aps.org/prb/abstract/10.1103/PhysRevB.79.075305
Additional Information Copy of article first published in: Physical review. B, 201-, v.79, issue 7

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Copyright Statement
©2009 American Physical Society





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