All Outputs (23)

High pressure as a tool to tune electronic coupling in self-assembled quantum dot nanostructures (2004)
Journal Article
Itskevich, I. E., Rybchenko, S. I., Andreev, A. D., Cahill, J., Tartakovskii, A. I., Skolnick, M. S., Hill, G., & Hopkinson, M. (2004). High pressure as a tool to tune electronic coupling in self-assembled quantum dot nanostructures. physica status solidi (b), 241(14), 3257-3262. https://doi.org/10.1002/pssb.200405235

High pressure provides an efficient way of controlling the electronic properties of semiconductor nanostructures. We use pressure to tune electronic coupling in stacks of self-assembled quantum dots (SAQDs). The coupling occurs as soon as the distanc... Read More about High pressure as a tool to tune electronic coupling in self-assembled quantum dot nanostructures.

Stark shift in electroluminescence of individual InAs quantum dots (2000)
Journal Article
Itskevich, I., Rybchenko, S., Tartakovskii, I., Stoddart, S., Levin, A., Main, P., Eaves, L., Henini, M., & Parnell, S. (in press). Stark shift in electroluminescence of individual InAs quantum dots. Applied physics letters, 76(26), 3932-3934. https://doi.org/10.1063/1.126825

We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assembled quantum dots is embedded, with an active area of submicron size. In the electroluminescence spectra of these devices, we observed isolated narrow... Read More about Stark shift in electroluminescence of individual InAs quantum dots.

Electroluminescence from individual InAs self-assembled quantum dots (2000)
Journal Article
Itskevich, I., Stoddart, S., Rybchenko, S., Tartakovskii, I., Eaves, L., Parnell, S., Main, P., & Henini, M. (2000). Electroluminescence from individual InAs self-assembled quantum dots. Physica status solidi. A, Applied research, 178(1), 307-311. https://doi.org/10.1002/1521-396X%28200003%29178%3A1%3C307%3A%3AAID-PSSA307%3E3.0.CO%3B2-Y

Emission lines from individual InAs self-assembled quantum dots (SAQD) have been observed in electroluminescence spectra from small-area p-i-n light-emitting-diode heterostructure devices containing an embedded layer of SAQD. In the energy range whic... Read More about Electroluminescence from individual InAs self-assembled quantum dots.