Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties

Yeap, G. H.; Rybchenko, S. I.; Itskevich, I. E.; Haywood, S. K.

Abstract

InSb-based self-assembled quantum dots are very promising for the midinfrared (3-5μm) optical range. We have analyzed the effect of geometry and composition on the electronic structure and optical spectra of InAsx Sb1-x /InAs dots. The calculated transition energies agree well with the available experimental data. The results show that the geometry of the dot can be estimated from the optical spectra if the composition is known, and vice versa. © 2009 The American Physical Society.

Citation

Yeap, G. H., Rybchenko, S. I., Itskevich, I. E., & Haywood, S. K. (2009). Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties. Physical review B: Condensed matter and materials physics, 79(7), 075305-1-075305-6. https://doi.org/10.1103/physrevb.79.075305

• Journal Article Type: Article
• Acceptance Date: Nov 12, 2008
• Online Publication Date: Feb 9, 2009
• Publication Date: Feb 2, 2009
• Deposit Date: Nov 13, 2014
• Publicly Available Date: Nov 13, 2014
• Journal: Physical review. B
• Print ISSN: 1098-0121
• Publisher: American Physical Society
• Peer Reviewed: Peer Reviewed
• Volume: 79
• Issue: 7
• Article Number: ARTN 075305
• Pages: 075305-1-075305-6
• DOI: https://doi.org/10.1103/physrevb.79.075305
• Keywords: Electronic, Optical and Magnetic Materials; Condensed Matter Physics
• Public URL: https://hull-repository.worktribe.com/output/461783
• Publisher URL: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.79.075305
• Additional Information: Copy of article first published in: Physical review. B, 201-, v.79, issue 7
• Contract Date: Nov 13, 2014