Outputs (9)

Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications (2023)
Journal Article
Yeap, G. H., Rybchenko, S., Itskevich, I., Haywood, S., Carrington, P., & Krier, A. (2023). Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications. Defect and Diffusion Forum, 425, 3-8. https://doi.org/10.4028/p-72o15p

InSb-based self-assembled quantum dots (SAQDs) are very promising for the mid-infrared (3-5 μm) optical range. We have analysed the electronic structure and optical properties of InAsxSb1- x/InAs dots. In this paper, we present the results of the mod... Read More about Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications.

Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors (2012)
Journal Article
Hong, B. H., Rybchenko, S. I., Itskevich, I. E., Haywood, S. K., Tan, C. H., Vines, P., & Hugues, M. (2012). Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors. Journal of applied physics, 111(3), 033713. https://doi.org/10.1063/1.3684603

Intraband absorption in quantum-dot-in-a-well (DWELL) mid-infrared photodetectors is investigated using photocurrent spectroscopy and computationally cost-effective modeling linked to experimental data. The DWELL systems are challenging for modeling... Read More about Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors.

Modeling of intraband absorption for quantum dot-in-well structures with low computational cost (2010)
Journal Article
Hong, B. H., Rybchenko, S. I., Itskevich, I. E., Haywood, S. K., Tan, C. H., Vines, P., & Hugues, M. (2010). Modeling of intraband absorption for quantum dot-in-well structures with low computational cost. Journal of Physics: Conference Series, 242(1), Article 012013. https://doi.org/10.1088/1742-6596/242/1/012013

Much effort has been committed to development of quantum-dot-based infrared photodetectors owing to their potential for normal-incidence absorption and low dark current.Quantum-dot-in-well structures offer additional advantages, such as better wavele... Read More about Modeling of intraband absorption for quantum dot-in-well structures with low computational cost.

Strained arrays of colloidal nanoparticles: Conductance and magnetoresistance enhancement (2009)
Journal Article
Rybchenko, S. I., Dyab, A. K. F., Haywood, S. K., Itskevich, I. E., & Paunov, V. N. (2009). Strained arrays of colloidal nanoparticles: Conductance and magnetoresistance enhancement. Nanotechnology, 20(42), Article ARTN 425607. https://doi.org/10.1088/0957-4484/20/42/425607

Colloidal nanoparticles are very popular as building blocks of functional arrays for electronic and optical applications. However, there is a problem in achieving electrical conductivity in such nanoarrays due to their molecular shells. These shells,... Read More about Strained arrays of colloidal nanoparticles: Conductance and magnetoresistance enhancement.

Applicability of the kp method to modeling of InAs/GaSb short-period superlattices (2009)
Journal Article
Hong, B. H., Rybchenko, S. I., Itskevich, I. E., Haywood, S. K., Intartaglia, R., Tasco, V., Rainò, G., & De Giorgi, M. (2009). Applicability of the kp method to modeling of InAs/GaSb short-period superlattices. Physical review B: Condensed matter and materials physics, 79(16), 165323-1-165323-4. https://doi.org/10.1103/PhysRevB.79.165323

We investigate the long-standing controversy surrounding modeling of the electronic spectra of InAs/GaSb short-period superlattices (SPSLs). Most commonly, such modeling for semiconductor heterostructures is based on the kp method. However, this meth... Read More about Applicability of the kp method to modeling of InAs/GaSb short-period superlattices.

Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties (2009)
Journal Article
Yeap, G. H., Rybchenko, S. I., Itskevich, I. E., & Haywood, S. K. (2009). Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties. Physical review B: Condensed matter and materials physics, 79(7), 075305-1-075305-6. https://doi.org/10.1103/physrevb.79.075305

InSb-based self-assembled quantum dots are very promising for the midinfrared (3-5μm) optical range. We have analyzed the effect of geometry and composition on the electronic structure and optical spectra of InAsx Sb1-x /InAs dots. The calculated tra... Read More about Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties.

L-band-related interband transition in InSb/GaSb self-assembled quantum dots (2008)
Book Chapter
Rybchenko, S. I., Gupta, R., Itskevich, I. E., & Haywood, S. K. (2008). L-band-related interband transition in InSb/GaSb self-assembled quantum dots. In Springer Proceedings in Physics; Narrow Gap Semiconductors 2007 (81-83). Springer Verlag. https://doi.org/10.1007/978-1-4020-8425-6_20

Effect of lattice-mismatch-induced strain on Γ-, X- and L-conduction-band edges in III-V self-assembled quantum dots has been calculated. The misfit strain is shown to strongly affect the band edges, leading to a possibility of Γ-L and Γ-X crossover.... Read More about L-band-related interband transition in InSb/GaSb self-assembled quantum dots.

Conduction-band crossover induced by misfit strain in InSb/GaSb self-assembled quantum dots (2007)
Journal Article
Rybchenko, S. I., Gupta, R., Lai, K. T., Itskevich, I. E., Haywood, S. K., Tasco, V., Deguffroy, N., Baranov, A. N., & Tournié, E. (2007). Conduction-band crossover induced by misfit strain in InSb/GaSb self-assembled quantum dots. Physical review B: Condensed matter and materials physics, 76(19), 0 - 0. https://doi.org/10.1103/physrevb.76.193309

We address the occurrence of conduction-band crossover in III-V self-assembled quantum dots solely due to misfit strain. Band structure analysis in terms of standard deformation-potential theory shows that Γ-X crossover can occur in the dot, while bo... Read More about Conduction-band crossover induced by misfit strain in InSb/GaSb self-assembled quantum dots.

Importance of aspect ratio over shape in determining the quantization potential of self-assembled zinc-blende III-V quantum dots (2007)
Journal Article
Rybchenko, S. I., Yeap, G., Gupta, R., Itskevich, I. E., & Haywood, S. K. (2007). Importance of aspect ratio over shape in determining the quantization potential of self-assembled zinc-blende III-V quantum dots. Journal of applied physics, 102(1), 013706. https://doi.org/10.1063/1.2752127

We have studied the effect of shape on the strain-modified electron/hole confinement potential in zinc-blende quantum dots (QDs), using standard deformation potential theory and an anisotropic continuum-elasticity approximation. Calculations were per... Read More about Importance of aspect ratio over shape in determining the quantization potential of self-assembled zinc-blende III-V quantum dots.