All Outputs (35)

Microwave oven fabricated hybrid memristor devices for non-volatile memory storage (2014)
Journal Article
Verrelli, E., Gray, R. J., O'Neill, M., Kelly, S. M., & Kemp, N. T. (2014). Microwave oven fabricated hybrid memristor devices for non-volatile memory storage. Materials Research Express, 1(4), Article ARTN 046305. https://doi.org/10.1088/2053-1591/1/4/046305

© 2014 IOP Publishing Ltd. Novel hybrid non-volatile memories made using an ultra-fast microwave heating method are reported for the first time. The devices, consisting of aligned ZnO nanorods embedded in poly (methyl methacrylate), require no formin... Read More about Microwave oven fabricated hybrid memristor devices for non-volatile memory storage.

Novel conducting polymer current limiting devices for low cost surge protection applications (2014)
Journal Article
Jabarullah, N. H., Verrelli, E., Mauldin, C., Navarro, L. A., Golden, J., Madianos, L., Tsoukalas, D., & Kemp, N. T. (2014). Novel conducting polymer current limiting devices for low cost surge protection applications. Journal of applied physics, 116(16), 164501. https://doi.org/10.1063/1.4899246

We report on the development of novel intrinsic conducting polymer two terminal surge protection devices. These resettable current limiting devices consist of polyaniline nanofibres doped with methane sulphonic acid electrochemically deposited betwee... Read More about Novel conducting polymer current limiting devices for low cost surge protection applications.

The magnetoelectrochemical switch (2014)
Journal Article
Lunca Popa, P., Kemp, N. T., Majjad, H., Dalmas, G., Faramarzi, V., Andreas, C., Hertel, R., & Doudin, B. (2014). The magnetoelectrochemical switch. Proceedings of the National Academy of Sciences of the United States of America, 111(29), 10433-10437. https://doi.org/10.1073/pnas.1322828111

In the field of spintronics, the archetype solid-state two-terminal device is the spin valve, where the resistance is controlled by the magnetization configuration. We show here how this concept of spin-dependent switch can be extended to magnetic el... Read More about The magnetoelectrochemical switch.

Heteronanojunctions with atomic size control using a lab-on-chip electrochemical approach with integrated microfluidics (2011)
Journal Article
Popa, P. L., Dalmas, G., Faramarzi, V., Dayen, J. F., Majjad, H., Kemp, N. T., & Doudin, B. (2011). Heteronanojunctions with atomic size control using a lab-on-chip electrochemical approach with integrated microfluidics. Nanotechnology, 22(21), 215302. https://doi.org/10.1088/0957-4484/22/21/215302

A versatile tool for electrochemical fabrication of heteronanojunctions with nanocontacts made of a few atoms and nanogaps of molecular spacing is presented. By integrating microfluidic circuitry in a lab-on-chip approach, we keep control of the elec... Read More about Heteronanojunctions with atomic size control using a lab-on-chip electrochemical approach with integrated microfluidics.

Magnetoresistance signature of resonant states in electromigrated Ni nanocontacts (2011)
Journal Article
Beaufrand, J. B., Dayen, J. F., Kemp, N. T., Sokolov, A., & Doudin, B. (2011). Magnetoresistance signature of resonant states in electromigrated Ni nanocontacts. Applied physics letters, 98(14), 142504-1 - 142504-3. https://doi.org/10.1063/1.3576939

Fundamental insight is reported into magnetoresistance properties of ballistic-type atomic size Ni nanojunctions obtained at low temperatures. Feedback-controlled electromigration was used to reveal the ballistic nature of the transport and stabilize... Read More about Magnetoresistance signature of resonant states in electromigrated Ni nanocontacts.

Electronic transport in conducting polymer nanowire array devices (2011)
Journal Article
Kemp, N. T., Newbury, R., Cochrane, J. W., & Dujardin, E. (2011). Electronic transport in conducting polymer nanowire array devices. Nanotechnology, 22(10), Article ARTN 105202. https://doi.org/10.1088/0957-4484/22/10/105202

We report on the temperature dependent conductivity and current-voltage (I-V) properties of novel polyaniline nanowire array devices. Below 60 K, I-V measurements show a transition to non-linear behaviour, leading to the onset at 30 K of a threshold... Read More about Electronic transport in conducting polymer nanowire array devices.

Nanotrench for nano and microparticle electrical interconnects (2010)
Journal Article
Dayen, J.-F., Faramarzi, V., Pauly, M., Kemp, N. T., Barbero, M., Pichon, B. P., Majjad, H., Begin-Colin, S., & Doudin, B. (2010). Nanotrench for nano and microparticle electrical interconnects. Nanotechnology, 21(33), Article 335303. https://doi.org/10.1088/0957-4484/21/33/335303

We present a simple and versatile patterning procedure for the reliable and reproducible fabrication of high aspect ratio (10 4 ) electrical interconnects that have separation distances down to 20 nm and lengths of several hundreds of microns. The pr... Read More about Nanotrench for nano and microparticle electrical interconnects.

Study of molecular spin-crossover complex Fe(phen)(2)(NCS)(2) thin films (2009)
Journal Article
Shi, S., Schmerber, G., Arabski, J., Beaufrand, J.-B., Kim, D. J., Boukari, S., Bowen, M., Kemp, N. T., Viart, N., Rogez, G., Beaurepaire, E., Aubriet, H., Petersen, J., Becker, C., & Ruch, D. (2009). Study of molecular spin-crossover complex Fe(phen)(2)(NCS)(2) thin films. Applied physics letters, 95(4), 043303. https://doi.org/10.1063/1.3192355

We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)(2)(NCS)(2) (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven s... Read More about Study of molecular spin-crossover complex Fe(phen)(2)(NCS)(2) thin films.

Characteristics of the nucleation and growth of template-free polyaniline nanowires and fibrils (2008)
Journal Article
Kemp, N. T., Cochrane, J. W., & Newbury, R. (2009). Characteristics of the nucleation and growth of template-free polyaniline nanowires and fibrils. Synthetic Metals, 159(5-6), 435-444. https://doi.org/10.1016/j.synthmet.2008.11.001

Template-free electrochemical deposition of large arrays of uniform and oriented conducting polymer nanowires has recently been demonstrated. In this article, we build upon the key earlier findings and report new phenomena (initial formation of a 2D... Read More about Characteristics of the nucleation and growth of template-free polyaniline nanowires and fibrils.

The stability of PEDOT:PSS films monitored by electron spin resonance (2008)
Journal Article
Lee, J. K., Cho, J. M., Shin, W. S., Moon, S. J., Kemp, N. T., Zhang, H., & Lamb, R. (2008). The stability of PEDOT:PSS films monitored by electron spin resonance. Journal of the Korean Physical Society, 52(3), 621-626. https://doi.org/10.3938/jkps.52.621

We used electron spin resonance (ESR) and electrical conductivity measurements to track the stability of poly(3,4-ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) and ethylene glycol (EG)-treated PEDOT:PSS (EG-PEDOT:PSS) films in air. We... Read More about The stability of PEDOT:PSS films monitored by electron spin resonance.

An Optically-Programmable Absorbing Metasurface
Presentation / Conference Contribution
Kossifos, K. M., Antoniades, M. A., Georgiou, J., Jaafar, A. H., & Kemp, N. T. (2018, May). An Optically-Programmable Absorbing Metasurface. Presented at 2018 IEEE International Symposium on Circuits and Systems (ISCAS)

A tunable metasurface absorber is presented in this work using an optically-programmable capacitor as the tuning element. The tuning element does not employ conventional semiconductor technologies to operate but rather a bases its tuning by changing... Read More about An Optically-Programmable Absorbing Metasurface.

Chua mem-components for adaptive RF metamaterials
Presentation / Conference Contribution
Georgiou, J., Kossifos, K. M., Antoniades, M. A., Jaafar, A., & Kemp, N. T. (2018, May). Chua mem-components for adaptive RF metamaterials. Presented at 2018 IEEE International Symposium on Circuits and Systems (ISCAS)

Chua's mem-components are ideal for creating adaptive metasurfaces for manipulating EM waves given that they hold their state without external biases. In this paper, we propose a generic adaptive reactive element that is in fact a memcapacitor/memind... Read More about Chua mem-components for adaptive RF metamaterials.

Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices
Presentation / Conference Contribution
Gater, M., Adawi, A. M., & Kemp, N. T. (2022, May). Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices. Presented at 2022 IEEE International Symposium on Circuits and Systems (ISCAS), Austin, Texas

We report on the electrical properties of gated two-terminal multilayered molybdenum disulfide (MoS2) memristor devices having a planar architecture. The approach based on highly dispersed MoS2 flakes drop cast onto a bottom gated Si/SiO2 (100nm) waf... Read More about Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices.

Memristor-based LSTM neuromorphic circuits for offshore wind turbine blade fault detection
Presentation / Conference Contribution
Burton, H., Bouillard, J. S., & Kemp, N. Memristor-based LSTM neuromorphic circuits for offshore wind turbine blade fault detection. Presented at 2023 IEEE International Symposium on Circuits and Systems (ISCAS), 21-25 May 2023, Monterey, CA, USA

The UK offshore wind industry is rapidly growing to meet CO2 emission targets. However, the main drawback of the offshore environment is the increased cost of maintenance. Artificial Neural Networks (ANN) show great potential to reduce this cost. Lon... Read More about Memristor-based LSTM neuromorphic circuits for offshore wind turbine blade fault detection.

Enhanced Switching in Solid Polymer Electrolyte Memristor Devices via the addition of Interfacial Barriers and Quantum Dots
Presentation / Conference Contribution
Gater, M., Adawi, A., & Kemp, N. (2023, December). Enhanced Switching in Solid Polymer Electrolyte Memristor Devices via the addition of Interfacial Barriers and Quantum Dots. Presented at NANOARCH 2023: IEEE/ACM International Symposium on Nanoscale Architectures, Dresden, Germany

We report on the electrical effects of single and double polymer (polymethacrylate) barriers on polyethylene oxide (PEO) based memristors. The single barrier device with an active layer embedded with WS2 quantum dots is also investigated. The additio... Read More about Enhanced Switching in Solid Polymer Electrolyte Memristor Devices via the addition of Interfacial Barriers and Quantum Dots.