All Outputs (7)

Polarization properties of Raman scattering by surface phonon polaritons in GaAsP nanowires (2021)
Journal Article
Rybchenko, S. I., Ali, S., Zhang, Y., & Liu, H. (2021). Polarization properties of Raman scattering by surface phonon polaritons in GaAsP nanowires. Journal of Physics D: Applied Physics, 54(47), Article 475109. https://doi.org/10.1088/1361-6463/ac2400

Strong resonant enhancement of Raman scattering on photonic resonance was observed in GaAsP semiconductor nanowires. The enhancement allowed for detailed studies of the surface phonon polariton (SPhP) scattering peak on individual nanowires. In parti... Read More about Polarization properties of Raman scattering by surface phonon polaritons in GaAsP nanowires.

Resonant enhancement of Raman scattering by surface phonon polaritons in GaAs nanowires (2021)
Journal Article
Rybchenko, S. I., Ali, S., Zhang, Y., & Liu, H. (2021). Resonant enhancement of Raman scattering by surface phonon polaritons in GaAs nanowires. Journal of Physics D: Applied Physics, 54(47), Article 475111. https://doi.org/10.1088/1361-6463/ac1a32

Surface optical phonons are normally considered as subtle and poorly reproducible features in the Raman spectra of nanostructured semiconductors, from which little or no information about the sample can be extracted. The present study demonstrates th... Read More about Resonant enhancement of Raman scattering by surface phonon polaritons in GaAs nanowires.

Effect of interface passivation on the magnetoresistance of granular magnetite Fe3(1-δ)O4 (2006)
Journal Article
Rybchenko, S. I., Fujishiro, Y., Takagi, H., & Awano, M. (2006). Effect of interface passivation on the magnetoresistance of granular magnetite Fe3(1-δ)O4. Applied physics letters, 89(13), Article 132509. https://doi.org/10.1063/1.2357581

The reductive passivation of granular interface was proposed to enhance the tunneling magnetoresistance of bulk granular magnetite. For this, an annealing in paraffin wax has been applied. As a result, the low-field magnetoresistance response was inc... Read More about Effect of interface passivation on the magnetoresistance of granular magnetite Fe3(1-δ)O4.

Tuning of electronic coupling between self-assembled quantum dots (2005)
Journal Article
Rybchenko, S., Itskevich, I., Skolnick, M. S., Cahill, J., Tartakovskii, A. I., Hill, G., & Hopkinson, M. (2005). Tuning of electronic coupling between self-assembled quantum dots. Applied physics letters, 87(3), 033104. https://doi.org/10.1063/1.1995953

Semiconductor self-assembled quantum dots (SAQDs) normally have zero-dimensional properties, but become coupled and acquire higher-dimensional character if the distance between the dots is small. Using photoluminescence spectroscopy under high hydros... Read More about Tuning of electronic coupling between self-assembled quantum dots.

High pressure as a tool to tune electronic coupling in self-assembled quantum dot nanostructures (2004)
Journal Article
Itskevich, I. E., Rybchenko, S. I., Andreev, A. D., Cahill, J., Tartakovskii, A. I., Skolnick, M. S., Hill, G., & Hopkinson, M. (2004). High pressure as a tool to tune electronic coupling in self-assembled quantum dot nanostructures. physica status solidi (b), 241(14), 3257-3262. https://doi.org/10.1002/pssb.200405235

High pressure provides an efficient way of controlling the electronic properties of semiconductor nanostructures. We use pressure to tune electronic coupling in stacks of self-assembled quantum dots (SAQDs). The coupling occurs as soon as the distanc... Read More about High pressure as a tool to tune electronic coupling in self-assembled quantum dot nanostructures.

Stark shift in electroluminescence of individual InAs quantum dots (2000)
Journal Article
Itskevich, I., Rybchenko, S., Tartakovskii, I., Stoddart, S., Levin, A., Main, P., Eaves, L., Henini, M., & Parnell, S. (in press). Stark shift in electroluminescence of individual InAs quantum dots. Applied physics letters, 76(26), 3932-3934. https://doi.org/10.1063/1.126825

We have fabricated light-emitting-diode heterostructure devices, in which a layer of InAs self-assembled quantum dots is embedded, with an active area of submicron size. In the electroluminescence spectra of these devices, we observed isolated narrow... Read More about Stark shift in electroluminescence of individual InAs quantum dots.

Electroluminescence from individual InAs self-assembled quantum dots (2000)
Journal Article
Itskevich, I., Stoddart, S., Rybchenko, S., Tartakovskii, I., Eaves, L., Parnell, S., Main, P., & Henini, M. (2000). Electroluminescence from individual InAs self-assembled quantum dots. Physica status solidi. A, Applied research, 178(1), 307-311. https://doi.org/10.1002/1521-396X%28200003%29178%3A1%3C307%3A%3AAID-PSSA307%3E3.0.CO%3B2-Y

Emission lines from individual InAs self-assembled quantum dots (SAQD) have been observed in electroluminescence spectra from small-area p-i-n light-emitting-diode heterostructure devices containing an embedded layer of SAQD. In the energy range whic... Read More about Electroluminescence from individual InAs self-assembled quantum dots.